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5962-00-321-8332

20 Products

UA733MJ-00

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218332

NSN

5962-00-321-8332

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UA733MJ-00

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218332

NSN

5962-00-321-8332

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: ADJUSTABLE AND EXTERNALLY COMPENSATED AND MONOLITHIC AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SILVER
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

UA733MJ

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218332

NSN

5962-00-321-8332

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UA733MJ

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218332

NSN

5962-00-321-8332

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DIFFERENTIAL AND 1 AMPLIFIER, VIDEO
FEATURES PROVIDED: ADJUSTABLE AND EXTERNALLY COMPENSATED AND MONOLITHIC AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: SILVER
III PRECIOUS MATERIAL AND LOCATION: TERMINALS SILVER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SILVER
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

323BH033

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

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323BH033

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

MFG

TELCOM SEMICONDUCTOR INC

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

932447-501B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

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932447-501B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

DMS 80082B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

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DMS 80082B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

NC8604

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

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NC8604

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218423

NSN

5962-00-321-8423

MFG

ITT SEMICONDUCTORS DIV

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.350 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

934179-1B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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934179-1B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

934179-1C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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934179-1C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ATF295-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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ATF295-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

PHILIPS CIRCUIT ASSEMBLIES

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

CP9508

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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CP9508

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

MICRO-PRECISION TECHNOLOGIES INC.

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

DH720204K

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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DH720204K

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

WHITE ELECTRONIC DESIGNS CORP ORATION DIV MILITARY DIVISION

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

DH721110F

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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DH721110F

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

E9503

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

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E9503

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003218425

NSN

5962-00-321-8425

MFG

ENON MICROWAVE INC

Description

BODY HEIGHT: 0.245 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.595 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934179 STANDARD
TIME RATING PER CHACTERISTIC: 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 180.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -23.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

934178-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

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934178-1B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, INTERFACE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/SWITCH
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ATF296-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

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ATF296-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

MFG

PHILIPS CIRCUIT ASSEMBLIES

Description

BODY HEIGHT: 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, INTERFACE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/SWITCH
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

DH721110G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

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DH721110G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

MFG

MICROSEMI CORP.-SCOTTSDALE DBA MICROSEMI

Description

BODY HEIGHT: 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, INTERFACE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/SWITCH
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

E9502

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

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E9502

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

MFG

ENON MICROWAVE INC

Description

BODY HEIGHT: 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, INTERFACE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/SWITCH
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

TS-3351

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

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TS-3351

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962003218427

NSN

5962-00-321-8427

MFG

MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE

Description

BODY HEIGHT: 0.265 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.605 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, INTERFACE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/SWITCH
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

932061-501B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003222076

NSN

5962-00-322-2076

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932061-501B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003222076

NSN

5962-00-322-2076

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND W/ENABLE AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE

DS55107W

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003222076

NSN

5962-00-322-2076

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DS55107W

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962003222076

NSN

5962-00-322-2076

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.160 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-85 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/STROBE AND W/ENABLE AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.0 VOLTS MINIMUM POWER SOURCE AND 5.0 VOLTS MAXIMUM POWER SOURCE