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5962-00-400-0805

20 Products

SC5960-0079-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

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SC5960-0079-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

MFG

DRS ICAS, LLC

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND LOW POWER AND COMPLEMENTARY OUTPUTS AND EDGE TRIGGERED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

6803-1086-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

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6803-1086-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

MFG

DRS ICAS, LLC

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND LOW POWER AND COMPLEMENTARY OUTPUTS AND EDGE TRIGGERED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

Q67000K3Z63

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

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Q67000K3Z63

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

MFG

EPCOS AG

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND LOW POWER AND COMPLEMENTARY OUTPUTS AND EDGE TRIGGERED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

S8162J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

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S8162J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND LOW POWER AND COMPLEMENTARY OUTPUTS AND EDGE TRIGGERED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

S8162W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

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S8162W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004000805

NSN

5962-00-400-0805

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.008 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-004-AA JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND LOW POWER AND COMPLEMENTARY OUTPUTS AND EDGE TRIGGERED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

911238-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

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911238-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE AND 2 TRANSLATOR, LEVEL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND EXPANDABLE AND ADJUSTABLE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

91303181

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

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91303181

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

MFG

THALES VORM THOMSON-CSF ELEKTRONIK GMBH

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE AND 2 TRANSLATOR, LEVEL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND EXPANDABLE AND ADJUSTABLE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

9624DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

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9624DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE AND 2 TRANSLATOR, LEVEL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND EXPANDABLE AND ADJUSTABLE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

F9624DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

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F9624DC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004001842

NSN

5962-00-400-1842

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE AND 2 TRANSLATOR, LEVEL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND EXPANDABLE AND ADJUSTABLE AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

717320-007

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

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717320-007

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

717320-7

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

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717320-7

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SL3857

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

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SL3857

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN15851

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

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SN15851

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN15851FP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

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SN15851FP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003112

NSN

5962-00-400-3112

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

331378-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003989

NSN

5962-00-400-3989

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331378-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003989

NSN

5962-00-400-3989

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND/NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: 331378-1
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

RC932D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003989

NSN

5962-00-400-3989

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RC932D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003989

NSN

5962-00-400-3989

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND/NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: 331378-1
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

RM6764

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003989

NSN

5962-00-400-3989

View More Info

RM6764

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004003989

NSN

5962-00-400-3989

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 BUFFER, NAND/NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MFR SOURCE CONTROLLING REFERENCE: 331378-1
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

385744-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004004028

NSN

5962-00-400-4028

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385744-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004004028

NSN

5962-00-400-4028

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, MASTER SLAVE
FEATURES PROVIDED: HIGH SPEED AND HERMETICALLY SEALED AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN4043

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004004028

NSN

5962-00-400-4028

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SN4043

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004004028

NSN

5962-00-400-4028

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, MASTER SLAVE
FEATURES PROVIDED: HIGH SPEED AND HERMETICALLY SEALED AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

531593-016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004004553

NSN

5962-00-400-4553

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531593-016

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004004553

NSN

5962-00-400-4553

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 531593-016
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: WIRE-OR OUTPUTS AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MAXIMUM POWER DISSIPATION RATING: 44.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: MINIMUM SWITCHING TIME ALL GATES IS 4.0 NANOSECONDS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 8.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT