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5962-00-403-4830

20 Products

SN15961N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

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SN15961N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

RM961DC/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

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RM961DC/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

RM961DC/883C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

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RM961DC/883C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SC13043L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

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SC13043L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN15961J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

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SN15961J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004034830

NSN

5962-00-403-4830

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: 0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

350-0072-030

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036323

NSN

5962-00-403-6323

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350-0072-030

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036323

NSN

5962-00-403-6323

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.460 INCHES NOMINAL
BODY LENGTH: 0.810 INCHES NOMINAL
BODY WIDTH: 0.750 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS

350-0072-080

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036323

NSN

5962-00-403-6323

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350-0072-080

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036323

NSN

5962-00-403-6323

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.460 INCHES NOMINAL
BODY LENGTH: 0.810 INCHES NOMINAL
BODY WIDTH: 0.750 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS

350-0072-010

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036324

NSN

5962-00-403-6324

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350-0072-010

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036324

NSN

5962-00-403-6324

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.401 INCHES MINIMUM AND 0.470 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
BODY WIDTH: 0.700 INCHES MINIMUM AND 0.775 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER
FEATURES PROVIDED: MONOLITHIC
III OVERALL HEIGHT: 0.629 INCHES MINIMUM AND 0.731 INCHES MAXIMUM
III OVERALL WIDTH: 2.050 INCHES MINIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: RESIN
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 5 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

350-0072-070

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036324

NSN

5962-00-403-6324

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350-0072-070

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004036324

NSN

5962-00-403-6324

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

BODY HEIGHT: 0.401 INCHES MINIMUM AND 0.470 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.810 INCHES MAXIMUM
BODY WIDTH: 0.700 INCHES MINIMUM AND 0.775 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER
FEATURES PROVIDED: MONOLITHIC
III OVERALL HEIGHT: 0.629 INCHES MINIMUM AND 0.731 INCHES MAXIMUM
III OVERALL WIDTH: 2.050 INCHES MINIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: RESIN
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 5 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

910423-070T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036870

NSN

5962-00-403-6870

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910423-070T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036870

NSN

5962-00-403-6870

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED AND 1 FLIP-FLOP, J-K, AND INPUT MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND EDGE TRIGGERED AND PRESETTABLE AND W/CLEAR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS; INSULATOR FURNISHED
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 39.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN5470F11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036870

NSN

5962-00-403-6870

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SN5470F11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036870

NSN

5962-00-403-6870

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED AND 1 FLIP-FLOP, J-K, AND INPUT MASTER SLAVE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND EDGE TRIGGERED AND PRESETTABLE AND W/CLEAR
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS; INSULATOR FURNISHED
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 39.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

910423-080T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036871

NSN

5962-00-403-6871

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910423-080T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036871

NSN

5962-00-403-6871

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 ADDER, FULL, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND DARLINGTON-CONNECTED AND COMPLEMENTARY OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 270.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS; INSULATOR FURNISHED
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN5480F11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036871

NSN

5962-00-403-6871

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SN5480F11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036871

NSN

5962-00-403-6871

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.035 INCHES MINIMUM AND 0.050 INCHES MAXIMUM
BODY LENGTH: 0.250 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-84 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 ADDER, FULL, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND MEDIUM POWER AND MEDIUM SPEED AND DARLINGTON-CONNECTED AND COMPLEMENTARY OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 270.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS; INSULATOR FURNISHED
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

1134R

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

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1134R

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

MFG

PHILCO-FORD CORP MICROELECTRONICS DIV

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED AND 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/CLEAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

7148-264-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

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7148-264-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

MFG

RECON/OPTICAL INC .

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED AND 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/CLEAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

913HC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

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913HC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED AND 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/CLEAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

MC813G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

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MC813G

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036874

NSN

5962-00-403-6874

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED AND 1 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND W/ENABLE AND LOW POWER AND W/STORAGE AND W/CLEAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 24.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

SN4094F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036886

NSN

5962-00-403-6886

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SN4094F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004036886

NSN

5962-00-403-6886

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

MCA1923N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004038089

NSN

5962-00-403-8089

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MCA1923N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004038089

NSN

5962-00-403-8089

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY OUTSIDE DIAMETER: 0.650 INCHES NOMINAL
BODY WIDTH: 0.360 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, REFERENCE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 4 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.8 VOLTS MAXIMUM POWER SOURCE

910423-051T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004038349

NSN

5962-00-403-8349

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910423-051T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004038349

NSN

5962-00-403-8349

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

BODY LENGTH: 0.275 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: 0.070 IN. THK