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5962-00-406-6334

20 Products

RM711TE883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066334

NSN

5962-00-406-6334

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RM711TE883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066334

NSN

5962-00-406-6334

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/STROBE AND MEDIUM SPEED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507848 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

RB711K

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066334

NSN

5962-00-406-6334

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RB711K

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066334

NSN

5962-00-406-6334

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND W/STROBE AND MEDIUM SPEED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-507848 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

531895-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066338

NSN

5962-00-406-6338

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531895-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066338

NSN

5962-00-406-6338

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG, SINGLE POLE DOUBLE THROW
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND BURN IN AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-531895 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 160.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE

HAG30021XX

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066338

NSN

5962-00-406-6338

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HAG30021XX

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066338

NSN

5962-00-406-6338

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG, SINGLE POLE DOUBLE THROW
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND BURN IN AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-531895 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 160.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE

SI3002AA/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066338

NSN

5962-00-406-6338

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SI3002AA/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066338

NSN

5962-00-406-6338

MFG

SILICONIX INCORPORATED D IV SILICONIX

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG, SINGLE POLE DOUBLE THROW
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND BURN IN AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 96214-531895 DRAWING
TIME RATING PER CHACTERISTIC: 500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 160.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 10.0 VOLTS MAXIMUM POWER SOURCE

531915-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066340

NSN

5962-00-406-6340

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531915-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066340

NSN

5962-00-406-6340

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND RETRIGGERABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96214-531915 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

HL54795

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066340

NSN

5962-00-406-6340

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HL54795

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066340

NSN

5962-00-406-6340

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND RETRIGGERABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96214-531915 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

U3I960151X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066340

NSN

5962-00-406-6340

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U3I960151X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066340

NSN

5962-00-406-6340

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND RETRIGGERABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96214-531915 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

531915-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066341

NSN

5962-00-406-6341

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531915-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066341

NSN

5962-00-406-6341

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 531915-3
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND COMPLEMENTARY OUTPUTS AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531915 STANDARD
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

U6A906151X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066341

NSN

5962-00-406-6341

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U6A906151X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066341

NSN

5962-00-406-6341

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 531915-3
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND MEDIUM SPEED AND COMPLEMENTARY OUTPUTS AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MANUFACTURERS CODE: 96214
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531915 STANDARD
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

531923-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066342

NSN

5962-00-406-6342

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531923-2

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066342

NSN

5962-00-406-6342

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 531923-2
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH POWER AND HYBRID
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96214-531923 DRAWING
THE MANUFACTURERS DATA:

HIC037L

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066342

NSN

5962-00-406-6342

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HIC037L

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066342

NSN

5962-00-406-6342

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 531923-2
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH POWER AND HYBRID
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96214-531923 DRAWING
THE MANUFACTURERS DATA:

LH0002H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066342

NSN

5962-00-406-6342

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LH0002H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962004066342

NSN

5962-00-406-6342

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.155 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 531923-2
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH POWER AND HYBRID
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96214-531923 DRAWING
THE MANUFACTURERS DATA:

531942-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066347

NSN

5962-00-406-6347

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531942-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066347

NSN

5962-00-406-6347

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 531942-3
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531942 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN11710

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066347

NSN

5962-00-406-6347

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SN11710

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066347

NSN

5962-00-406-6347

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: 531942-3
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND BIPOLAR AND W/TOTEM POLE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 96214
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531942 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

531990-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066348

NSN

5962-00-406-6348

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531990-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066348

NSN

5962-00-406-6348

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 230.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531990 DRAWING

SC7045L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066348

NSN

5962-00-406-6348

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SC7045L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066348

NSN

5962-00-406-6348

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 230.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531990 DRAWING

531991-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066349

NSN

5962-00-406-6349

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531991-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066349

NSN

5962-00-406-6349

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 190.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-531991 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -10.0 VOLTS NOMINAL POWER SOURCE

SC7046L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066349

NSN

5962-00-406-6349

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SC7046L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066349

NSN

5962-00-406-6349

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 190.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96214-531991 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -10.0 VOLTS NOMINAL POWER SOURCE

531993-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066351

NSN

5962-00-406-6351

View More Info

531993-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962004066351

NSN

5962-00-406-6351

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 230.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96214-531993 DRAWING
TIME RATING PER CHACTERISTIC: 8.50 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 8.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT