My Quote Request
5962-00-435-1080
20 Products
SG171-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351080
NSN
5962-00-435-1080
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
MICROCIRCUIT,DIGITAL
Related Searches:
RG171K
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351080
NSN
5962-00-435-1080
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
SG171
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351080
NSN
5962-00-435-1080
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
MICROCIRCUIT,DIGITAL
Related Searches:
351-7099-010
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351081
NSN
5962-00-435-1081
MFG
ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS
Description
MICROCIRCUIT,DIGITAL
Related Searches:
CG180
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351081
NSN
5962-00-435-1081
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
Related Searches:
G180
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351081
NSN
5962-00-435-1081
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
MICROCIRCUIT,DIGITAL
Related Searches:
RG180K
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351081
NSN
5962-00-435-1081
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
SG180-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351081
NSN
5962-00-435-1081
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
MICROCIRCUIT,DIGITAL
Related Searches:
351-7266-010
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351082
NSN
5962-00-435-1082
MFG
ROCKWELL COLLINS INC. DIV GOVERNMENT SYSTEMS - DALLAS
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 19.60 NANOSECONDS MAXIMUM PROPAGATION DELAY AND 8.80 NANOSECONDS MAXIMUM FALL
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CG210
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351082
NSN
5962-00-435-1082
MFG
FREESCALE SEMICONDUCTOR INC.
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 19.60 NANOSECONDS MAXIMUM PROPAGATION DELAY AND 8.80 NANOSECONDS MAXIMUM FALL
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
G210
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351082
NSN
5962-00-435-1082
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 19.60 NANOSECONDS MAXIMUM PROPAGATION DELAY AND 8.80 NANOSECONDS MAXIMUM FALL
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RG210K
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351082
NSN
5962-00-435-1082
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 19.60 NANOSECONDS MAXIMUM PROPAGATION DELAY AND 8.80 NANOSECONDS MAXIMUM FALL
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SG210-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004351082
NSN
5962-00-435-1082
MFG
SYLVANIA ELECTRIC PRODUCTS INC SEMICONDUCTOR PRODUCTS DIV
Description
CURRENT RATING PER CHARACTERISTIC: 6.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 2 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 19.60 NANOSECONDS MAXIMUM PROPAGATION DELAY AND 8.80 NANOSECONDS MAXIMUM FALL
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2539209-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962004352205
NSN
5962-00-435-2205
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
MICROCIRCUIT,LINEAR
Related Searches:
MC660L
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962004352205
NSN
5962-00-435-2205
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,LINEAR
Related Searches:
2539209-12
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004352660
NSN
5962-00-435-2660
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 10001
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
MFR SOURCE CONTROLLING REFERENCE: 2539209-12
OPERATING TEMP RANGE: -30.0 TO 75.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
MC671L
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004352660
NSN
5962-00-435-2660
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.780 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
MANUFACTURERS CODE: 10001
MAXIMUM POWER DISSIPATION RATING: 132.0 MILLIWATTS
MFR SOURCE CONTROLLING REFERENCE: 2539209-12
OPERATING TEMP RANGE: -30.0 TO 75.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
2539209-13
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962004352661
NSN
5962-00-435-2661
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
MICROCIRCUIT,LINEAR
Related Searches:
MC672L
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962004352661
NSN
5962-00-435-2661
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,LINEAR
Related Searches:
ML932C1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962004353371
NSN
5962-00-435-3371
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE