My Quote Request
5962-00-530-4657
20 Products
SC21011FH2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION
Related Searches:
RX5892-T8023
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304652
NSN
5962-00-530-4652
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.075 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.249 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310172 DRAWING
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
S8234W/883C
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304652
NSN
5962-00-530-4652
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.075 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.249 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310172 DRAWING
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
UEF3522
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304652
NSN
5962-00-530-4652
MFG
SPRAGUE ELECTRIC CO WORLD HQS
Description
(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.075 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.249 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL AND BODY SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 94117-310172 DRAWING
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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310113P2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962005304653
NSN
5962-00-530-4653
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 TRANSMITTER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 94117-310113 SPECIFICATION
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962005304653
NSN
5962-00-530-4653
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 TRANSMITTER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 94117-310113 SPECIFICATION
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
HAI9-245-002
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962005304653
NSN
5962-00-530-4653
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 TRANSMITTER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 94117-310113 SPECIFICATION
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
HD9-245-2
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962005304653
NSN
5962-00-530-4653
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 TRANSMITTER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: TRIPLE 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 94117-310113 SPECIFICATION
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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310223P2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304654
NSN
5962-00-530-4654
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND W/CLEAR AND W/ENABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310223 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304654
NSN
5962-00-530-4654
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND W/CLEAR AND W/ENABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310223 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNJ54H103W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304654
NSN
5962-00-530-4654
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND W/CLEAR AND W/ENABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310223 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
TS-3375-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304654
NSN
5962-00-530-4654
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE EDGE TRIGGERED AND W/CLEAR AND W/ENABLE AND HIGH SPEED AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310223 DRAWING
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
310177P3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304655
NSN
5962-00-530-4655
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.075 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 LATCH, D
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND RESETTABLE AND W/STORAGE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310177 DRAWING
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HL17946
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304655
NSN
5962-00-530-4655
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.075 INCHES MAXIMUM
BODY LENGTH: 0.370 INCHES MINIMUM AND 0.409 INCHES MAXIMUM
BODY WIDTH: 0.247 INCHES MINIMUM AND 0.283 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 LATCH, D
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND W/ENABLE AND RESETTABLE AND W/STORAGE AND POSITIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310177 DRAWING
Related Searches:
310138P2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION
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310138P3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION
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C4567Q
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION
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C4567W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION
Related Searches:
RX6967
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005304657
NSN
5962-00-530-4657
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 94117-310138 SPECIFICATION