My Quote Request
5962-00-532-1406
20 Products
CC664W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005321406
NSN
5962-00-532-1406
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 1
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND PRESETTABLE AND RESETTABLE AND W/STROBE AND 2-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS AND GLASS AND METAL
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS; COUNTER MAY BE CONNECTED AS A DIVIDE BY 2,4,8,OR 16
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310183 DRAWING
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322117
NSN
5962-00-532-2117
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-NOR
FEATURES PROVIDED: EXPANDABLE AND GATED OUTPUT AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS OR GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310160 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322117
NSN
5962-00-532-2117
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-NOR
FEATURES PROVIDED: EXPANDABLE AND GATED OUTPUT AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS OR GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310160 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322117
NSN
5962-00-532-2117
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-NOR
FEATURES PROVIDED: EXPANDABLE AND GATED OUTPUT AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS OR GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 30.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FORMED LEADS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310160 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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NSN
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MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310156 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MFG
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Description
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310156 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322125
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MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310156 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322140
NSN
5962-00-532-2140
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ENCODER, PRIORITY
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310128 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322140
NSN
5962-00-532-2140
MFG
ROCHESTER ELECTRONICS LLC
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ENCODER, PRIORITY
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310128 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322140
NSN
5962-00-532-2140
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ENCODER, PRIORITY
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310128 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962005322140
NSN
5962-00-532-2140
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ENCODER, PRIORITY
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310128 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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5962005322140
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5962-00-532-2140
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TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.235 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
BODY WIDTH: 0.140 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 ENCODER, PRIORITY
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND HIGH SPEED AND EXPANDABLE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 12.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 94117-310128 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962005322147
NSN
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MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.520 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND 3-STATE OUTPUT AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310132 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962005322147
NSN
5962-00-532-2147
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.520 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND 3-STATE OUTPUT AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310132 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE
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5962-00-532-2147
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DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.520 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND 3-STATE OUTPUT AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310132 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE
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NSN, MFG P/N
5962005322147
NSN
5962-00-532-2147
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.250 INCHES NOMINAL
BODY WIDTH: 0.520 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND 3-STATE OUTPUT AND HIGH SPEED AND PROGRAMMABLE AND PROGRAMMED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310132 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE
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MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310171 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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5962005322174
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MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/BUFFERED OUTPUT AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 216.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 94117-310171 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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5962005335794
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MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
CRITICALITY CODE JUSTIFICATION: ZZZY
DESIGN CONTROL REFERENCE: 709HM
MANUFACTURERS CODE: 07263
REFERENCE NUMBER DIFFERENTIATING CHARACTERISTICS: MATERIAL WILL BE IN ACCORDANCE WITH SHIPS PARTS CONTROL CENTER ACTIVITY HX QUALITY CONTROL,MANUFACTURING AND TESTING SPECIFICATIONS
THE MANUFACTURERS DATA:
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4033400-0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
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RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 4033400-0001
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: AN/FPS-85
MANUFACTURERS CODE: 06845
THE MANUFACTURERS DATA: