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5962-00-588-8334

20 Products

U10124

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888334

NSN

5962-00-588-8334

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U10124

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888334

NSN

5962-00-588-8334

MFG

DRS TACTICAL SYSTEMS LTD DBA LYNWOOD

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSLATOR, LEVEL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.2 VOLTS MAXIMUM POWER SOURCE

SN10124J-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888334

NSN

5962-00-588-8334

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SN10124J-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888334

NSN

5962-00-588-8334

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSLATOR, LEVEL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND HIGH SPEED AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 380.0 MILLIWATTS
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.2 VOLTS MAXIMUM POWER SOURCE

9015DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888431

NSN

5962-00-588-8431

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9015DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888431

NSN

5962-00-588-8431

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2-2-2-4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

Q67000-H689-Z

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888431

NSN

5962-00-588-8431

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Q67000-H689-Z

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888431

NSN

5962-00-588-8431

MFG

EPCOS AG

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2-2-2-4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

U6B901559X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888431

NSN

5962-00-588-8431

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U6B901559X

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005888431

NSN

5962-00-588-8431

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND MEDIUM SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2-2-2-4 INPUT
MAXIMUM POWER DISSIPATION RATING: 40.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

AH0140CD

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005888931

NSN

5962-00-588-8931

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AH0140CD

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005888931

NSN

5962-00-588-8931

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.730 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SWITCH, ANALOG AND 2 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED AND W/FIELD EFFECT TRANSISTOR SWITCH AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 2500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

AH0140D

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005888931

NSN

5962-00-588-8931

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AH0140D

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005888931

NSN

5962-00-588-8931

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.730 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SWITCH, ANALOG AND 2 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED AND W/FIELD EFFECT TRANSISTOR SWITCH AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 2500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

7100027-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

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7100027-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

MFG

ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.335 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.8 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100027 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

7100027-1REVE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

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7100027-1REVE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

MFG

ELECTRODYNAMICS INC. DBA L-3 COMMUNICATIONS ELECTRODYNAMICS

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.335 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.8 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100027 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

C4249W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

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C4249W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.335 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.8 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100027 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

C4299J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

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C4299J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.335 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.8 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100027 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

C4299W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

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C4299W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.335 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.8 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100027 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

S8815W/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

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S8815W/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889222

NSN

5962-00-588-9222

MFG

INTERCOMP INC USA

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.335 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 42.8 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 10236-7100027 DRAWING
TIME RATING PER CHACTERISTIC: 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 13.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.0 VOLTS MAXIMUM POWER SOURCE

3130-5000-41

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

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3130-5000-41

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

MFG

ANADEX INC

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DM54141J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

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DM54141J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N74141B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

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N74141B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S54141F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

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S54141F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889552

NSN

5962-00-588-9552

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 110.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

3342-15C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005889593

NSN

5962-00-588-9593

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3342-15C

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005889593

NSN

5962-00-588-9593

MFG

BURR-BROWN CORP

Description

BODY HEIGHT: 0.600 INCHES MAXIMUM
BODY LENGTH: 1.800 INCHES MAXIMUM
BODY WIDTH: 1.200 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 550.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

DMS 81084B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005889593

NSN

5962-00-588-9593

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DMS 81084B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962005889593

NSN

5962-00-588-9593

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.600 INCHES MAXIMUM
BODY LENGTH: 1.800 INCHES MAXIMUM
BODY WIDTH: 1.200 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 8 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 550.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.0 VOLTS MAXIMUM POWER SOURCE

10111

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889597

NSN

5962-00-588-9597

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10111

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962005889597

NSN

5962-00-588-9597

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.815 INCHES MINIMUM AND 0.840 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: MONOLITHIC AND NEGATIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND WIRE-OR OUTPUTS
III END ITEM IDENTIFICATION: TEST SET BOEING P/N 251180-1
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 160.0 MILLIWATTS
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE