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5962-00-861-3507

20 Products

UBA2181

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008613507

NSN

5962-00-861-3507

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UBA2181

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962008613507

NSN

5962-00-861-3507

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

BODY HEIGHT: 0.065 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 30.00 MILLIAMPERES MAXIMUM INPUT
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/RESISTOR
III OVERALL WIDTH: 0.500 INCHES NOMINAL
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC OR METAL
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.2 VOLTS NOMINAL POWER SOURCE

2556909

MICROCIRCUIT ASSEMBLY

NSN, MFG P/N

5962008625162

NSN

5962-00-862-5162

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2556909

MICROCIRCUIT ASSEMBLY

NSN, MFG P/N

5962008625162

NSN

5962-00-862-5162

MFG

NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER

BUWEPSDWG2556909

MICROCIRCUIT ASSEMBLY

NSN, MFG P/N

5962008625162

NSN

5962-00-862-5162

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BUWEPSDWG2556909

MICROCIRCUIT ASSEMBLY

NSN, MFG P/N

5962008625162

NSN

5962-00-862-5162

MFG

ALLIANT TECHSYSTEMS INC MARINE SYSTEMS EAST

600A7

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008626170

NSN

5962-00-862-6170

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600A7

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008626170

NSN

5962-00-862-6170

MFG

CARDWELL CONDENSER CORP LAPOINTE-ADMIRAL DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 52.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC15946J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008626170

NSN

5962-00-862-6170

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SNC15946J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008626170

NSN

5962-00-862-6170

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 52.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 30.00 NANOSECONDS
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

819139-0044C

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628409

NSN

5962-00-862-8409

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819139-0044C

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628409

NSN

5962-00-862-8409

MFG

MICROTECNICA SRL

Description

DESIGN CONTROL REFERENCE: SNC5482J
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CERAMIC,TIN-PLATED LEADS,HIGH-SPEED TTL 2-BIT FULL ADDER,0.785IN.LG,0.325IN.W,0.330IN.H
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:

SNC5482J

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628409

NSN

5962-00-862-8409

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SNC5482J

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628409

NSN

5962-00-862-8409

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: SNC5482J
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CERAMIC,TIN-PLATED LEADS,HIGH-SPEED TTL 2-BIT FULL ADDER,0.785IN.LG,0.325IN.W,0.330IN.H
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:

SNC5482J00

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628409

NSN

5962-00-862-8409

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SNC5482J00

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628409

NSN

5962-00-862-8409

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN CONTROL REFERENCE: SNC5482J
GENERAL CHARACTERISTICS ITEM DESCRIPTION: CERAMIC,TIN-PLATED LEADS,HIGH-SPEED TTL 2-BIT FULL ADDER,0.785IN.LG,0.325IN.W,0.330IN.H
MANUFACTURERS CODE: 01295
THE MANUFACTURERS DATA:

619865-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008628618

NSN

5962-00-862-8618

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619865-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008628618

NSN

5962-00-862-8618

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DECODER, BINARY CODED DECIMAL TO ONE OF TEN AND 1 DECODER, FOUR TO TEN LINE AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC5442J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008628618

NSN

5962-00-862-8618

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SNC5442J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008628618

NSN

5962-00-862-8618

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DECODER, BINARY CODED DECIMAL TO ONE OF TEN AND 1 DECODER, FOUR TO TEN LINE AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC5442J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008628618

NSN

5962-00-862-8618

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SNC5442J00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008628618

NSN

5962-00-862-8618

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.195 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.795 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: M0-001-AG JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL AND 1 DECODER, BINARY CODED DECIMAL TO ONE OF TEN AND 1 DECODER, FOUR TO TEN LINE AND 1 DRIVER, NIXIE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

2053657-0703

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628683

NSN

5962-00-862-8683

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2053657-0703

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628683

NSN

5962-00-862-8683

MFG

RAYTHEON COMPANY DBA RAYTHEON

CS704K

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628683

NSN

5962-00-862-8683

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CS704K

INTEGRATED CIRCUIT,

NSN, MFG P/N

5962008628683

NSN

5962-00-862-8683

MFG

PHILIPS SEMICONDUCTORS INC

A00055-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008630194

NSN

5962-00-863-0194

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A00055-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008630194

NSN

5962-00-863-0194

MFG

BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.

507489-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644664

NSN

5962-00-864-4664

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507489-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644664

NSN

5962-00-864-4664

MFG

RAYTHEON COMPANY

SN2904

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644664

NSN

5962-00-864-4664

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SN2904

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644664

NSN

5962-00-864-4664

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

195307-000

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

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195307-000

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED
FEATURES PROVIDED: GAIN CONTROLLED AND MONOLITHIC
III END ITEM IDENTIFICATION: A-3 ACFT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

C8164J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

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C8164J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED
FEATURES PROVIDED: GAIN CONTROLLED AND MONOLITHIC
III END ITEM IDENTIFICATION: A-3 ACFT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

LC30125D1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

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LC30125D1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

MFG

LANSDALE SEMICONDUCTOR INC .

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED
FEATURES PROVIDED: GAIN CONTROLLED AND MONOLITHIC
III END ITEM IDENTIFICATION: A-3 ACFT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

UBA2175

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

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UBA2175

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962008644689

NSN

5962-00-864-4689

MFG

SPRAGUE ELECTRIC CO WORLD HQS

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP, CLOCKED
FEATURES PROVIDED: GAIN CONTROLLED AND MONOLITHIC
III END ITEM IDENTIFICATION: A-3 ACFT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS