My Quote Request
5962-00-890-3540
20 Products
U6A7709312
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903540
NSN
5962-00-890-3540
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND LOW POWER AND LOW LEVEL AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
RM709D
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903540
NSN
5962-00-890-3540
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND LOW POWER AND LOW LEVEL AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
SN52709J
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903540
NSN
5962-00-890-3540
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND LOW POWER AND LOW LEVEL AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
SN52709J00
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903540
NSN
5962-00-890-3540
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND LOW POWER AND LOW LEVEL AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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346376-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903541
NSN
5962-00-890-3541
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
RM710D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903541
NSN
5962-00-890-3541
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
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RM710DC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903541
NSN
5962-00-890-3541
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
389718-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903542
NSN
5962-00-890-3542
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 17.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 49956-389718 SPECIFICATION
Related Searches:
RM930D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903542
NSN
5962-00-890-3542
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 17.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 49956-389718 SPECIFICATION
Related Searches:
RX3062
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903542
NSN
5962-00-890-3542
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 17.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 49956-389718 SPECIFICATION
Related Searches:
389719-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903543
NSN
5962-00-890-3543
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.169 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
MFR SOURCE CONTROLLING REFERENCE: 389719-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-389719 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RM932D
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903543
NSN
5962-00-890-3543
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.169 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
MFR SOURCE CONTROLLING REFERENCE: 389719-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-389719 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RX3055
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962008903543
NSN
5962-00-890-3543
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.169 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.286 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 BUFFER AND 2 GATE, NAND-NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MANUFACTURERS CODE: 3B150
MAXIMUM POWER DISSIPATION RATING: 250.0 MILLIWATTS
MFR SOURCE CONTROLLING REFERENCE: 389719-1
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-389719 DRAWING
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DMS 81031B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903809
NSN
5962-00-890-3809
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 9.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC1531G
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903809
NSN
5962-00-890-3809
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 9.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ML1531I
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903809
NSN
5962-00-890-3809
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 9.0 VOLTS MAXIMUM POWER SOURCE
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SMB651716
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903809
NSN
5962-00-890-3809
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 9.0 VOLTS MAXIMUM POWER SOURCE
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ST4770213HE0001
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903809
NSN
5962-00-890-3809
MFG
ROCKWELL INTERNATIONAL CORP NORTH AMERICAN AIRCRAFT OPNS
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH GAIN AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND DARLINGTON-CONNECTED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 8 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 9.0 VOLTS MAXIMUM POWER SOURCE
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586-254
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903820
NSN
5962-00-890-3820
MFG
AMPEX SYSTEMS CORP
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 72-00013-001
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
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67A28A412-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962008903820
NSN
5962-00-890-3820
MFG
NAVAL AIR SYSTEMS COMMAND
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE MATERIAL: METAL
MANUFACTURERS CODE: 00724
MFR SOURCE CONTROLLING REFERENCE: 72-00013-001
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA: