My Quote Request
5962-01-003-3698
20 Products
CD4050AD/F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033698
NSN
5962-01-003-3698
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, NONINVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND ELECTROSTATIC SENSITIVE AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 140.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 110.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
619896-901
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033699
NSN
5962-01-003-3699
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 619896-901
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 37695
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
619900-901
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033700
NSN
5962-01-003-3700
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 619900-901
DESIGN FUNCTION AND QUANTITY: 4 GATE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 37695
THE MANUFACTURERS DATA:
Related Searches:
619911-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033701
NSN
5962-01-003-3701
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY LENGTH: 0.750 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 619911-1
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 37695
THE MANUFACTURERS DATA:
Related Searches:
CD4011BMJ/883
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033701
NSN
5962-01-003-3701
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY LENGTH: 0.750 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 619911-1
DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 37695
THE MANUFACTURERS DATA:
Related Searches:
619912-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033702
NSN
5962-01-003-3702
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY LENGTH: 0.750 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 619912-1
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: EDGE TRIGGERED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 37695
THE MANUFACTURERS DATA:
Related Searches:
619924-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033703
NSN
5962-01-003-3703
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY LENGTH: 0.875 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 619924-3
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: DUAL 4 STAGE
MANUFACTURERS CODE: 37695
THE MANUFACTURERS DATA:
Related Searches:
615458-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033704
NSN
5962-01-003-3704
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY LENGTH: 0.875 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 1 BUFFER, INVERTING
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE AND BURN IN
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPECIAL FEATURES: ESD
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
2143939-20
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033712
NSN
5962-01-003-3712
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.199 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE
III OVERALL HEIGHT: 0.270 INCHES MINIMUM AND 0.384 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 55974
MFR SOURCE CONTROLLING REFERENCE: 2143939-20
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
MM5305-20
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033712
NSN
5962-01-003-3712
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.199 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE
III OVERALL HEIGHT: 0.270 INCHES MINIMUM AND 0.384 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 55974
MFR SOURCE CONTROLLING REFERENCE: 2143939-20
OPERATING TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
DM82S23
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033995
NSN
5962-01-003-3995
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE AND EXPANDABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
N82S23F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033995
NSN
5962-01-003-3995
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE AND EXPANDABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
S82S23F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033995
NSN
5962-01-003-3995
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE AND EXPANDABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
S82S23F/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033995
NSN
5962-01-003-3995
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/OPEN COLLECTOR AND BIPOLAR AND PROGRAMMABLE AND W/ENABLE AND EXPANDABLE AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
Related Searches:
1820-1291
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033996
NSN
5962-01-003-3996
MFG
HEWLETT PACKARD CO
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 LATCH, D, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EDGE TRIGGERED AND SYNCHRONOUS AND W/ENABLE AND W/CLEAR AND PRESETTABLE AND W/DISABLE AND W/STROBE AND RESETTABLE AND ASYNCHRONOUS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 330.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM7554J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033996
NSN
5962-01-003-3996
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 LATCH, D, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EDGE TRIGGERED AND SYNCHRONOUS AND W/ENABLE AND W/CLEAR AND PRESETTABLE AND W/DISABLE AND W/STROBE AND RESETTABLE AND ASYNCHRONOUS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 330.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM8554J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033996
NSN
5962-01-003-3996
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 LATCH, D, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EDGE TRIGGERED AND SYNCHRONOUS AND W/ENABLE AND W/CLEAR AND PRESETTABLE AND W/DISABLE AND W/STROBE AND RESETTABLE AND ASYNCHRONOUS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 330.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM8554N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010033996
NSN
5962-01-003-3996
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY AND 1 LATCH, D, CLOCKED
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND 3-STATE OUTPUT AND EDGE TRIGGERED AND SYNCHRONOUS AND W/ENABLE AND W/CLEAR AND PRESETTABLE AND W/DISABLE AND W/STROBE AND RESETTABLE AND ASYNCHRONOUS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
MAXIMUM POWER DISSIPATION RATING: 330.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
115200-0003
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010034105
NSN
5962-01-003-4105
MFG
THALES ATM INC.
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 81349-MIL-STD-883B STANDARD
Related Searches:
569160-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010034105
NSN
5962-01-003-4105
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.780 INCHES NOMINAL
BODY WIDTH: 0.280 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: EXTERNALLY COMPENSATED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 81349-MIL-STD-883B STANDARD