My Quote Request
5962-01-005-5529
20 Products
ST67166/0001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N74122F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N8T22N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54122J00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74122
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN87326
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNJ54122J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010055529
NSN
5962-01-005-5529
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01202BCB
DESIGN FUNCTION AND QUANTITY: 1 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RETRIGGERABLE AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 170.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/12
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/12 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
0090226
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010055875
NSN
5962-01-005-5875
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
DESIGN CONTROL REFERENCE: TVR2000V
FEATURES PROVIDED: MONOLITHIC
MANUFACTURERS CODE: 03877
THE MANUFACTURERS DATA:
Related Searches:
BO0090226
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010055875
NSN
5962-01-005-5875
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
DESIGN CONTROL REFERENCE: TVR2000V
FEATURES PROVIDED: MONOLITHIC
MANUFACTURERS CODE: 03877
THE MANUFACTURERS DATA:
Related Searches:
TVR2000V
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010055875
NSN
5962-01-005-5875
MFG
GILBERT ENGINEERING CO INC/INCON SUB OF TRANSITRON ELECTRONIC CORP
Description
BODY HEIGHT: 0.225 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.370 INCHES NOMINAL
DESIGN CONTROL REFERENCE: TVR2000V
FEATURES PROVIDED: MONOLITHIC
MANUFACTURERS CODE: 03877
THE MANUFACTURERS DATA:
Related Searches:
807754
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010056561
NSN
5962-01-005-6561
MFG
NORTH ATLANTIC INDUSTRIES INC.
Description
BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH PERFORMANCE AND INTERNALLY COMPENSATED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -18.0 VOLTS MINIMUM POWER SOURCE AND 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC1747CL
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010056561
NSN
5962-01-005-6561
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.170 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH PERFORMANCE AND INTERNALLY COMPENSATED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 100.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -18.0 VOLTS MINIMUM POWER SOURCE AND 18.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
60154-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010056567
NSN
5962-01-005-6567
MFG
TALOS SYSTEMS INC
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PHASE LOCKED LOOP
FEATURES PROVIDED: MONOLITHIC AND ADJUSTABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: RESIN
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -12.0 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
LM565CN
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010056567
NSN
5962-01-005-6567
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 PHASE LOCKED LOOP
FEATURES PROVIDED: MONOLITHIC AND ADJUSTABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: RESIN
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -12.0 VOLTS MINIMUM POWER SOURCE AND 12.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2855527-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010056568
NSN
5962-01-005-6568
MFG
NAVAIR AND NAVSEA MANAGED ORIGINAL DESIGN ACTIVITY DWG NOT MATERIAL/PARTS SUPPLIER
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 EXPANDER, AND-OR AND 2 GATE, AND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC527F
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010056568
NSN
5962-01-005-6568
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 EXPANDER, AND-OR AND 2 GATE, AND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ML527A1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010056568
NSN
5962-01-005-6568
MFG
LANSDALE SEMICONDUCTOR INC .
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 EXPANDER, AND-OR AND 2 GATE, AND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RG280CK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010056568
NSN
5962-01-005-6568
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 EXPANDER, AND-OR AND 2 GATE, AND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RG281K
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010056568
NSN
5962-01-005-6568
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.070 INCHES MAXIMUM
BODY LENGTH: 0.240 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-86 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 EXPANDER, AND-OR AND 2 GATE, AND
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND POSITIVE OUTPUTS AND EXPANDABLE AND HIGH SPEED AND WIRE-OR OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 38.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
756940-37
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010056569
NSN
5962-01-005-6569
MFG
AIR ARMAMENT CENTER/ EN
Description
BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.730 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SWITCH, ANALOG AND 2 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HYBRID AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND HIGH SPEED AND W/FIELD EFFECT TRANSISTOR SWITCH AND W/ENABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 CHANNEL
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 2500.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -15.0 VOLTS MINIMUM POWER SOURCE AND 15.0 VOLTS MAXIMUM POWER SOURCE

