Explore Products

My Quote Request

No products added yet

5962-01-007-4534

20 Products

SN41773

MICROCIRCUIT

NSN, MFG P/N

5962010074534

NSN

5962-01-007-4534

View More Info

SN41773

MICROCIRCUIT

NSN, MFG P/N

5962010074534

NSN

5962-01-007-4534

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

717136-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074535

NSN

5962-01-007-4535

View More Info

717136-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074535

NSN

5962-01-007-4535

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

HL52962

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074535

NSN

5962-01-007-4535

View More Info

HL52962

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074535

NSN

5962-01-007-4535

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN41771

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074535

NSN

5962-01-007-4535

View More Info

SN41771

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074535

NSN

5962-01-007-4535

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HIGH SPEED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

717310-73

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

View More Info

717310-73

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

MFG

RAYTHEON COMPANY DBA RAYTHEON

SC15470

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

View More Info

SC15470

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

MFG

FREESCALE SEMICONDUCTOR INC.

SC15470FH

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

View More Info

SC15470FH

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

MFG

FREESCALE SEMICONDUCTOR INC.

SN11990

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

View More Info

SN11990

MICROCIRCUIT

NSN, MFG P/N

5962010074536

NSN

5962-01-007-4536

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

717310-74

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074537

NSN

5962-01-007-4537

View More Info

717310-74

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074537

NSN

5962-01-007-4537

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.350 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND W/RESISTOR AND POSITIVE OUTPUTS
III OVERALL HEIGHT: 0.030 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
III OVERALL LENGTH: 0.350 INCHES MAXIMUM
III OVERALL WIDTH: 0.840 INCHES MINIMUM
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

717316-99

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

View More Info

717316-99

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 48.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

DMS 88096B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

View More Info

DMS 88096B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 48.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SN22157

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

View More Info

SN22157

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 48.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

SNM74H11W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

View More Info

SNM74H11W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074538

NSN

5962-01-007-4538

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.070 INCHES MAXIMUM
BODY LENGTH: 0.260 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 48.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 3 GATE, AND
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: TRIPLE 3 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TIME RATING PER CHACTERISTIC: 12.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

717355-446

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074539

NSN

5962-01-007-4539

View More Info

717355-446

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074539

NSN

5962-01-007-4539

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 280.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-446 DRAWING
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

ZA0063

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074539

NSN

5962-01-007-4539

View More Info

ZA0063

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074539

NSN

5962-01-007-4539

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 128
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.830 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 SHIFT REGISTER, STATIC
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 280.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-446 DRAWING
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

3348DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

View More Info

3348DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

MFG

FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 255.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-448 DRAWING

3348DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

View More Info

3348DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 255.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-448 DRAWING

717355-448

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

View More Info

717355-448

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 255.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-448 DRAWING

DMS 88029B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

View More Info

DMS 88029B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 255.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-448 DRAWING

ZA0062

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

View More Info

ZA0062

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010074540

NSN

5962-01-007-4540

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.560 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND W/COMMON CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 255.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 05869-717355-448 DRAWING