My Quote Request
5962-01-009-7763
20 Products
UA111DMQB
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010097763
NSN
5962-01-009-7763
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: LOW CURRENT AND MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
LM111D883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010097763
NSN
5962-01-009-7763
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: LOW CURRENT AND MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
LM111J/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010097763
NSN
5962-01-009-7763
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: LOW CURRENT AND MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
SNC52111J
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010097763
NSN
5962-01-009-7763
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
FEATURES PROVIDED: LOW CURRENT AND MONOLITHIC AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
772354-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097950
NSN
5962-01-009-7950
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-6 DRAWING
Related Searches:
803863-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097950
NSN
5962-01-009-7950
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-6 DRAWING
Related Searches:
878127-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097950
NSN
5962-01-009-7950
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-6 DRAWING
Related Searches:
HM1-7602-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097950
NSN
5962-01-009-7950
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-6 DRAWING
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097950
NSN
5962-01-009-7950
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097950
NSN
5962-01-009-7950
MFG
NODAK RURAL ELECTRIC COOPERATIVE INC
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-6 DRAWING
Related Searches:
772354-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097951
NSN
5962-01-009-7951
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-5 DRAWING
Related Searches:
803863-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097951
NSN
5962-01-009-7951
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-5 DRAWING
Related Searches:
878127-5
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097951
NSN
5962-01-009-7951
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-5 DRAWING
Related Searches:
HM1-7602-8
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097951
NSN
5962-01-009-7951
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-5 DRAWING
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097951
NSN
5962-01-009-7951
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010097951
NSN
5962-01-009-7951
MFG
DLA LAND AND MARITIME
Description
BODY HEIGHT: 0.155 INCHES NOMINAL
BODY LENGTH: 0.760 INCHES NOMINAL
BODY WIDTH: 0.270 INCHES NOMINAL
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED
III END ITEM IDENTIFICATION: AN/GPN-20
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
TEST DATA DOCUMENT: 96214-818127-5 DRAWING
Related Searches:
542930
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010097953
NSN
5962-01-009-7953
MFG
THALES COMMUNICATIONS S.A.
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
SPECIAL FEATURES: OPEN DRAIN,N-CHANNEL
Related Searches:
MM74C906
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010097953
NSN
5962-01-009-7953
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 BUFFER, INVERTING
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
SPECIAL FEATURES: OPEN DRAIN,N-CHANNEL
Related Searches:
351-4783-010
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010097955
NSN
5962-01-009-7955
MFG
CONTINENTAL ELECTRONICS CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER AND 2 GATE, NAND
FEATURES PROVIDED: HIGH VOLTAGE
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
Related Searches:
MM74C908
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010097955
NSN
5962-01-009-7955
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER AND 2 GATE, NAND
FEATURES PROVIDED: HIGH VOLTAGE
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
Related Searches:
MM74C908N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010097955
NSN
5962-01-009-7955
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
DESIGN FUNCTION AND QUANTITY: 2 DRIVER AND 2 GATE, NAND
FEATURES PROVIDED: HIGH VOLTAGE
III END ITEM IDENTIFICATION: AN/FRT-31, TRANSMITTING SET, RADIO
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
Related Searches:
MM74C909
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010097956
NSN
5962-01-009-7956
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.320 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 COMPARATOR, VOLTAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS