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5962-01-019-1512

20 Products

DM9602J/883C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

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DM9602J/883C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND PRESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-808636 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC5406J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191415

NSN

5962-01-019-1415

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SNC5406J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191415

NSN

5962-01-019-1415

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

DESIGN FUNCTION AND QUANTITY: 1 GATE, NAND
FEATURES PROVIDED: W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81413
MFR SOURCE CONTROLLING REFERENCE: 226563-001
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:

932475-501B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191416

NSN

5962-01-019-1416

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932475-501B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191416

NSN

5962-01-019-1416

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.159 INCHES NOMINAL
BODY LENGTH: 0.270 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 932475-501B
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP
FEATURES PROVIDED: HERMETICALLY SEALED AND EDGE TRIGGERED
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: PLANAR,EPITAXIAL
THE MANUFACTURERS DATA:

SC8381-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191416

NSN

5962-01-019-1416

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SC8381-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191416

NSN

5962-01-019-1416

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.159 INCHES NOMINAL
BODY LENGTH: 0.270 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 932475-501B
DESIGN FUNCTION AND QUANTITY: 1 FLIP-FLOP
FEATURES PROVIDED: HERMETICALLY SEALED AND EDGE TRIGGERED
INCLOSURE MATERIAL: SILICON
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: PLANAR,EPITAXIAL
THE MANUFACTURERS DATA:

932474-501B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191417

NSN

5962-01-019-1417

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932474-501B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191417

NSN

5962-01-019-1417

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.159 INCHES NOMINAL
BODY LENGTH: 0.270 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 932474-501B
DESIGN FUNCTION AND QUANTITY: 1 GATE, NOR
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: PLANAR,EPITAXIAL
THE MANUFACTURERS DATA:

SC8383-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191417

NSN

5962-01-019-1417

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SC8383-3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191417

NSN

5962-01-019-1417

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.159 INCHES NOMINAL
BODY LENGTH: 0.270 INCHES NOMINAL
BODY WIDTH: 0.500 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 932474-501B
DESIGN FUNCTION AND QUANTITY: 1 GATE, NOR
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE MATERIAL: SILICON
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 82577
SPECIAL FEATURES: PLANAR,EPITAXIAL
THE MANUFACTURERS DATA:

15-807741-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

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15-807741-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 730.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 07397-15-807741 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

162838-02

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

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162838-02

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

MFG

GE AVIATION SYSTEMS LLC

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 730.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 07397-15-807741 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

9615DMB

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

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9615DMB

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 730.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 07397-15-807741 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

9615DMQB

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

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9615DMQB

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010191504

NSN

5962-01-019-1504

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 730.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 07397-15-807741 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

15-807763-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

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15-807763-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-807763 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

MC526L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

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MC526L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-807763 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

RG80D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

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RG80D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-807763 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNG80J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

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SNG80J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191507

NSN

5962-01-019-1507

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-807763 DRAWING
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

15-807736

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191509

NSN

5962-01-019-1509

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15-807736

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191509

NSN

5962-01-019-1509

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 07397-15-807736 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN54L85J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191509

NSN

5962-01-019-1509

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SN54L85J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191509

NSN

5962-01-019-1509

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 11 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 07397-15-807736 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

15-808636-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

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15-808636-2

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

MFG

GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS

Description

BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND PRESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-808636 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

4323-2050-0040

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

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4323-2050-0040

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

MFG

DATA DEVICE CORPORATION

Description

BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND PRESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-808636 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DM9602J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

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DM9602J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND PRESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-808636 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DM9602J/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

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DM9602J/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010191512

NSN

5962-01-019-1512

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.110 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 MULTIVIBRATOR, MONOSTABLE
FEATURES PROVIDED: HERMETICALLY SEALED AND PRESETTABLE AND RETRIGGERABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 07397-15-808636 DRAWING
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 40.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT