My Quote Request
5962-01-030-8894
20 Products
LM2900N
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010308894
NSN
5962-01-030-8894
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 570.0 MILLIWATTS
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
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54S109DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308900
NSN
5962-01-030-8900
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DUAL EDGE TRIGGERED AND PRESETTABLE AND W/CLEAR AND W/ENABLE
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 90.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308900
NSN
5962-01-030-8900
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DUAL EDGE TRIGGERED AND PRESETTABLE AND W/CLEAR AND W/ENABLE
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 90.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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SN54S109J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308900
NSN
5962-01-030-8900
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DUAL EDGE TRIGGERED AND PRESETTABLE AND W/CLEAR AND W/ENABLE
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 90.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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SN74S109N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308900
NSN
5962-01-030-8900
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, J-K, CLOCKED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND DUAL EDGE TRIGGERED AND PRESETTABLE AND W/CLEAR AND W/ENABLE
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 90.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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710255-42
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308901
NSN
5962-01-030-8901
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK AND 1 TRANSLATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND LOW POWER
III END ITEM IDENTIFICATION: P-1166/UYA-4(V) FSCM 05869
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 5.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 05869-710255-42 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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SH19524
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308901
NSN
5962-01-030-8901
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, CLOCK AND 1 TRANSLATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND LOW POWER
III END ITEM IDENTIFICATION: P-1166/UYA-4(V) FSCM 05869
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 5.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 10 PIN
TEST DATA DOCUMENT: 05869-710255-42 DRAWING
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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352250018179
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308973
NSN
5962-01-030-8973
MFG
THALES NEDERLAND
Description
BODY HEIGHT: 0.009 INCHES NOMINAL
BODY LENGTH: 0.350 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: SN5430W10
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 01295
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
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SN5430W10
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308973
NSN
5962-01-030-8973
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.009 INCHES NOMINAL
BODY LENGTH: 0.350 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: SN5430W10
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 01295
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
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VBE443-36
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010308973
NSN
5962-01-030-8973
MFG
THALES NEDERLAND
Description
BODY HEIGHT: 0.009 INCHES NOMINAL
BODY LENGTH: 0.350 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: SN5430W10
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 01295
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
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625465-904
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010309109
NSN
5962-01-030-9109
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,LINEAR
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615331-901
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010309110
NSN
5962-01-030-9110
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615331-901
MANUFACTURERS CODE: 37695
THE MANUFACTURERS DATA:
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615330-902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010309111
NSN
5962-01-030-9111
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.049 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615330-902
MANUFACTURERS CODE: 37695
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SN54LS33W
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010309111
NSN
5962-01-030-9111
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.049 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.330 INCHES MINIMUM AND 0.385 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615330-902
MANUFACTURERS CODE: 37695
Related Searches:
615279-902
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010309112
NSN
5962-01-030-9112
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.434 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615279-902
MANUFACTURERS CODE: 37695
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010309112
NSN
5962-01-030-9112
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY LENGTH: 0.371 INCHES MINIMUM AND 0.434 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615279-902
MANUFACTURERS CODE: 37695
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635A210H21
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010309425
NSN
5962-01-030-9425
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.384 INCHES NOMINAL
BODY LENGTH: 0.808 INCHES MAXIMUM
BODY WIDTH: 0.257 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 635A210H21
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 97942
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 97942-635A210H21 MANUFACTURERS SPECIFICATION
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010309425
NSN
5962-01-030-9425
ROM/PROM FAMILY 013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010309425
NSN
5962-01-030-9425
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
BODY HEIGHT: 0.384 INCHES NOMINAL
BODY LENGTH: 0.808 INCHES MAXIMUM
BODY WIDTH: 0.257 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 635A210H21
FEATURES PROVIDED: BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MANUFACTURERS CODE: 97942
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIFICATION/STANDARD DATA: 97942-635A210H21 MANUFACTURERS SPECIFICATION
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
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178-686
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010309495
NSN
5962-01-030-9495
MFG
AUTEK SYSTEMS CORP
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: TEST STATION DISPLAY FSCM 81755
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010309495
NSN
5962-01-030-9495
MFG
THALES NEDERLAND
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-100 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE, DIFFERENTIAL
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: TEST STATION DISPLAY FSCM 81755
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT