My Quote Request
5962-01-031-1918
20 Products
SNM74LS32J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54LS32DM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54LS32J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54LS32L
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN54LSJ
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74L832N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32N-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32N-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32N8
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS32NDS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SNJ54L32J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010311918
NSN
5962-01-031-1918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30501BCB
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC AND POSITIVE OUTPUTS AND SCHOTTKY AND W/TOTEM POLE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 55.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/305
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/305 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
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583R524H01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010311919
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MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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722913-50
MICROCIRCUIT,MEMORY
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5962010311919
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RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
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MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
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MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND MONOLITHIC AND BIPOLAR AND POSITIVE OUTPUTS AND PROGRAMMABLE AND W/DECODED OUTPUT AND W/ENABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: DIGITAL DATA SET TYPE AN/FSQ-111 FSCM 81995
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.0 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND POSITIVE OUTPUTS
III END ITEM IDENTIFICATION: INFRARED RECONNAISSANCE SET TYPE AN/AAD-5 FSCM 94580
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 WIDE 3-2-2-3 INPUT
MAXIMUM POWER DISSIPATION RATING: 6.3 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-STD-883 SPECIFICATION
TIME RATING PER CHACTERISTIC: 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE