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5962-01-039-0011

20 Products

SN20412

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390011

NSN

5962-01-039-0011

View More Info

SN20412

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390011

NSN

5962-01-039-0011

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/04005BAA
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 75.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/40
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/40 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/04005BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390011

NSN

5962-01-039-0011

View More Info

M38510/04005BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390011

NSN

5962-01-039-0011

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/04005BAA
DESIGN FUNCTION AND QUANTITY: 1 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND HIGH SPEED AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 WIDE 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 75.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/40
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/40 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

5962-3801003BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

5962-3801003BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

5962-3801003BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

5962-3801003BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DMS 82081B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

DMS 82081B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

JM38510-01003BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

JM38510-01003BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

M38510/01003BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

M38510/01003BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

M38510/01003BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

M38510/01003BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

M38510/01003BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

View More Info

M38510/01003BEX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390012

NSN

5962-01-039-0012

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/01003BEA
DESIGN FUNCTION AND QUANTITY: 1 DECODER, EXCESS THREE GRAY TO DECIMAL AND 1 DECODER, FOUR TO TEN LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/DECODED OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 226.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/10
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/10 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 46.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 5.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 46.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

A574A016-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

View More Info

A574A016-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND LOW POWER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FAN-OUT QTY:10
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 140.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.0 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SD17554

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

View More Info

SD17554

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND LOW POWER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FAN-OUT QTY:10
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 140.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.0 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN29430

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

View More Info

SN29430

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND LOW POWER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FAN-OUT QTY:10
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 140.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.0 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SNC54L00W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

View More Info

SNC54L00W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390017

NSN

5962-01-039-0017

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/TOTEM POLE OUTPUT AND LOW POWER
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINALS GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 16.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPECIAL FEATURES: FAN-OUT QTY:10
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/20 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 140.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.0 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

5962-3800501BAB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

5962-3800501BAB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

5962-3800501BAX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

5962-3800501BAX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

910423-050T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

910423-050T1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION INC.

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

M38510/00501BAB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

M38510/00501BAB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SC5960-0099-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

SC5960-0099-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

DRS ICAS, LLC

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN5450F11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

SN5450F11

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

SN5450W10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

View More Info

SN5450W10

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010390018

NSN

5962-01-039-0018

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/00501BAB
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND EXPANDABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 2 WIDE 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 306.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/5
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/5 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 3.00 NANOSECONDS MINIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT AND 24.00 NANOSECONDS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
~1: MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT