My Quote Request
5962-01-040-1432
20 Products
SCL4041AE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
ALLEGRO MICROSYSTEMS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
5962-380550BCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
BL0867196
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
CD4041AE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
INTERSIL CORPORATION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
GM820ARR1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN AEROSPACE SYSTEMS
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
JM38510-05505BCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
JM38510-05505BCX
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
M38510/05505BCA
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
M38510/05505BCB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
PA60316-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401432
NSN
5962-01-040-1432
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/05505BCB
DESIGN FUNCTION AND QUANTITY: 4 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND TRUE/COMPLEMENTARY AND HIGH CURRENT AND POSITIVE OUTPUTS AND COMPLEMENTARY OUTPUTS AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 1 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/55
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/55 GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 175.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
Related Searches:
247AS-C0349-026
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
NAVAL AIR SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
9034DM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93434DM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HPRM01-8256B394G
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HPROM1-8256-2B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HPROM1-8256B394-G0185
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
HPROM1-8256B394-G0185
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 003
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
ROM/PROM FAMILY 003
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
ROM/PROM FAMILY 022
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SL40077
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010401434
NSN
5962-01-040-1434
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.199 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND W/ENABLE AND W/OPEN COLLECTOR AND WIRE-OR OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/BUFFERED OUTPUT AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC OR GLASS OR METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30003-247AS-C0349 DRAWING
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
058-001484
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401525
NSN
5962-01-040-1525
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
BODY HEIGHT: 0.075 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 2.100 INCHES MAXIMUM
BODY WIDTH: 0.530 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ANALYZER, AM
III END ITEM IDENTIFICATION: AN/ALQ-135V
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 058-003415-001
OPERATING TEMP RANGE: -55.0 TO 95.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
058-003415-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010401525
NSN
5962-01-040-1525
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
BODY HEIGHT: 0.075 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 2.100 INCHES MAXIMUM
BODY WIDTH: 0.530 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ANALYZER, AM
III END ITEM IDENTIFICATION: AN/ALQ-135V
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 26916
MFR SOURCE CONTROLLING REFERENCE: 058-003415-001
OPERATING TEMP RANGE: -55.0 TO 95.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-LOGIC
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

