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5962-01-041-3259

20 Products

SM28569

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

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SM28569

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 2300
(NON-CORE DATA) WORD QUANTITY: 100
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8302-010
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8302 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

DM74S387J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413232

NSN

5962-01-041-3232

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DM74S387J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413232

NSN

5962-01-041-3232

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 1816-0019
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/DISABLE
III END ITEM IDENTIFICATION: RECEIVING FACILITY,SPECIAL PURPOSE TYPE AN/FSQ-91(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 1LQK8
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N82S126F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413232

NSN

5962-01-041-3232

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N82S126F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413232

NSN

5962-01-041-3232

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 1816-0019
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/DISABLE
III END ITEM IDENTIFICATION: RECEIVING FACILITY,SPECIAL PURPOSE TYPE AN/FSQ-91(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 1LQK8
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413232

NSN

5962-01-041-3232

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ROM/PROM FAMILY 021

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413232

NSN

5962-01-041-3232

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.890 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 1816-0019
FEATURES PROVIDED: MONOLITHIC AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT AND W/DECODED OUTPUT AND POSITIVE OUTPUTS AND PROGRAMMABLE AND PROGRAMMED AND W/DISABLE
III END ITEM IDENTIFICATION: RECEIVING FACILITY,SPECIAL PURPOSE TYPE AN/FSQ-91(V)
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 1LQK8
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

717382-215

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413241

NSN

5962-01-041-3241

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717382-215

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413241

NSN

5962-01-041-3241

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.896 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN CONTROL REFERENCE: 717382-215
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND HIGH SPEED AND W/OPEN COLLECTOR AND BIPOLAR AND SCHOTTKY AND W/ENABLE AND W/DECODED OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MANUFACTURERS CODE: 05869
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726008-1 DRAWING
THE MANUFACTURERS DATA:
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

2685599181

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

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2685599181

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

MFG

THALES AVIONICS SA

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND W/DECODED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE

351-8249-010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

View More Info

351-8249-010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND W/DECODED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE

93661

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

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93661

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

MFG

MTS MICROELECTRONICS INC DBA M T S MICRO ELECTRONICS

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND W/DECODED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE

CD4061AD

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

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CD4061AD

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413257

NSN

5962-01-041-3257

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND W/DECODED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.5 VOLTS MAXIMUM POWER SOURCE

351-8303-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

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351-8303-010

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 96
(NON-CORE DATA) WORD QUANTITY: 24
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8303-010
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/COMPLEMENT AND W/ENABLE AND NEGATIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8303 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

51P06708G001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

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51P06708G001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 96
(NON-CORE DATA) WORD QUANTITY: 24
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8303-010
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/COMPLEMENT AND W/ENABLE AND NEGATIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8303 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

74-35242-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

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74-35242-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

MFG

RAYTHEON E-SYSTEMS INC

Description

(NON-CORE DATA) BIT QUANTITY: 96
(NON-CORE DATA) WORD QUANTITY: 24
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8303-010
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/COMPLEMENT AND W/ENABLE AND NEGATIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8303 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

DMS 81040B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

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DMS 81040B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 96
(NON-CORE DATA) WORD QUANTITY: 24
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8303-010
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/COMPLEMENT AND W/ENABLE AND NEGATIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8303 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

IMP-00A/520D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

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IMP-00A/520D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 96
(NON-CORE DATA) WORD QUANTITY: 24
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8303-010
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/COMPLEMENT AND W/ENABLE AND NEGATIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8303 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

SM28571

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

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SM28571

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010413258

NSN

5962-01-041-3258

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 96
(NON-CORE DATA) WORD QUANTITY: 24
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8303-010
DESIGN FUNCTION AND QUANTITY: 1 ARITHMETIC LOGIC UNIT AND 1 SHIFT REGISTER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/COMPLEMENT AND W/ENABLE AND NEGATIVE OUTPUTS AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8303 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

351-8302-010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

View More Info

351-8302-010

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 2300
(NON-CORE DATA) WORD QUANTITY: 100
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8302-010
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8302 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

51P06709G001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

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51P06709G001

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

MFG

MOTOROLA INC. DBA INTEGRATED INFORMATION SYSTEMS GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 2300
(NON-CORE DATA) WORD QUANTITY: 100
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8302-010
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8302 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

DMS 81040B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

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DMS 81040B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2300
(NON-CORE DATA) WORD QUANTITY: 100
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8302-010
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8302 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

IMP-16A/521D

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

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IMP-16A/521D

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 2300
(NON-CORE DATA) WORD QUANTITY: 100
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8302-010
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8302 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010413259

NSN

5962-01-041-3259

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2300
(NON-CORE DATA) WORD QUANTITY: 100
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.190 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
BODY WIDTH: 0.550 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 351-8302-010
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS AND W/ENABLE AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 21 INPUT
MANUFACTURERS CODE: 13499
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -10.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8302 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE