My Quote Request
5962-01-044-9918
20 Products
SN54LS86J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449918
NSN
5962-01-044-9918
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6L.5441.487.00-153059
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449918
NSN
5962-01-044-9918
6L.5441.487.00-153059
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449918
NSN
5962-01-044-9918
MFG
SELEX COMMUNICATIONS GMBH
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
BL3026238
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449918
NSN
5962-01-044-9918
MFG
ROHDE & SCHWARZ GMBH & CO. KG
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 17.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
615562-901
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449919
NSN
5962-01-044-9919
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.900 INCHES NOMINAL
BODY WIDTH: 0.310 INCHES NOMINAL
DESIGN CONTROL REFERENCE: 615562-901
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND METAL
MANUFACTURERS CODE: 37695
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:
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SD72651
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449921
NSN
5962-01-044-9921
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.805 INCHES NOMINAL
BODY WIDTH: 0.265 INCHES NOMINAL
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND METAL
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
15179-002
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449923
NSN
5962-01-044-9923
MFG
ASTRONAUTICS CORPORATION OF AMERICA
Description
MICROCIRCUIT,DIGITAL
Related Searches:
MC15686
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449923
NSN
5962-01-044-9923
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
Related Searches:
TS-3443
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449923
NSN
5962-01-044-9923
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
MICROCIRCUIT,DIGITAL
Related Searches:
2440093
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449927
NSN
5962-01-044-9927
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
S54S189F/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449927
NSN
5962-01-044-9927
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN54S189AJ
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449927
NSN
5962-01-044-9927
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN54S189J
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449927
NSN
5962-01-044-9927
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN54S189J-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449927
NSN
5962-01-044-9927
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SS/45027/1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010449927
NSN
5962-01-044-9927
MFG
BAE SYSTEMS RO DEFENCE
Description
(NON-CORE DATA) BIT QUANTITY: 64
(NON-CORE DATA) WORD QUANTITY: 16
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.735 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND SCHOTTKY AND 3-STATE OUTPUT AND W/ENABLE AND W/DISABLE AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 25.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
N8T97B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010450457
NSN
5962-01-045-0457
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: N8T97N
DESIGN FUNCTION AND QUANTITY: 6 BUFFER
FEATURES PROVIDED: 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 18324
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
N8T97N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010450457
NSN
5962-01-045-0457
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN CONTROL REFERENCE: N8T97N
DESIGN FUNCTION AND QUANTITY: 6 BUFFER
FEATURES PROVIDED: 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
MANUFACTURERS CODE: 18324
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:
Related Searches:
ES52SPL1CAO
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010451025
NSN
5962-01-045-1025
MFG
GOULD INC SIMULATION SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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IM5610C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010451025
NSN
5962-01-045-1025
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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N82S123F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010451025
NSN
5962-01-045-1025
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE
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52SPL-RGMK
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010451026
NSN
5962-01-045-1026
MFG
GOULD INC SIMULATION SYSTEMS DIV
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.302 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.2 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE