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5962-01-045-7925

20 Products

SN55463L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

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SN55463L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY LENGTH: 0.185 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: DS55463H
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MANUFACTURERS CODE: 27014
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

SD-532A-15

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457504

NSN

5962-01-045-7504

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SD-532A-15

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457504

NSN

5962-01-045-7504

MFG

NATEL ENGINEERING COMPANY INC . DBA POWERCUBE DIV NATEL CHATSWORTH DIVISION

3610108-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457506

NSN

5962-01-045-7506

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3610108-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457506

NSN

5962-01-045-7506

MFG

COHU INC. DBA COHU ELECTRONICS DIVISION

U6T7741393

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457506

NSN

5962-01-045-7506

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U6T7741393

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457506

NSN

5962-01-045-7506

MFG

FAIRCHILD SEMICONDUCTOR CORP

CA3047A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457508

NSN

5962-01-045-7508

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CA3047A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457508

NSN

5962-01-045-7508

MFG

INTERSIL CORPORATION

7472PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457509

NSN

5962-01-045-7509

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7472PC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457509

NSN

5962-01-045-7509

MFG

FAIRCHILD SEMICONDUCTOR CORP

CA2028B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457510

NSN

5962-01-045-7510

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CA2028B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457510

NSN

5962-01-045-7510

MFG

INTERSIL CORPORATION

101

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457512

NSN

5962-01-045-7512

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101

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457512

NSN

5962-01-045-7512

MFG

ANALOG DEVICES INC. DIV GREENSBORO SITE

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DC AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

A101

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457512

NSN

5962-01-045-7512

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A101

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457512

NSN

5962-01-045-7512

MFG

ANALOG DEVICES INC. DIV GREENSBORO SITE

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DC AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LM1539-6

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457512

NSN

5962-01-045-7512

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LM1539-6

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457512

NSN

5962-01-045-7512

MFG

ANALOG DEVICES INC. DIV GREENSBORO SITE

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DC AND 1 AMPLIFIER, WIDEBAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

10060944-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

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10060944-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

MFG

HONEYWELL INTERNATIONAL INC DBA HONEYWELL DIV AEROSPACE-MINNEAPOLIS

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

DMS 80015B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

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DMS 80015B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

RM8234DD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

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RM8234DD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

RM8234DD/3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

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RM8234DD/3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

S8234F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

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S8234F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457923

NSN

5962-01-045-7923

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND W/RESISTOR AND W/OPEN COLLECTOR AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 200.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 38.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

ES3363-03

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457924

NSN

5962-01-045-7924

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ES3363-03

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457924

NSN

5962-01-045-7924

MFG

DRS SUSTAINMENT SYSTEMS INC. DIV DRS SUSTAINMENT SYSTEMS INC. USE CAGE CODE 98255 FOR CATALOGING.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW NOISE AND MONOLITHIC
III OVERALL HEIGHT: 0.685 INCHES NOMINAL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

HA2-0909-B1367-003H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457924

NSN

5962-01-045-7924

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HA2-0909-B1367-003H

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010457924

NSN

5962-01-045-7924

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW NOISE AND MONOLITHIC
III OVERALL HEIGHT: 0.685 INCHES NOMINAL
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

55463HM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

View More Info

55463HM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY LENGTH: 0.185 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: DS55463H
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MANUFACTURERS CODE: 27014
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

DS55463H

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

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DS55463H

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY LENGTH: 0.185 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: DS55463H
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MANUFACTURERS CODE: 27014
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

SG55463T

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

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SG55463T

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010457925

NSN

5962-01-045-7925

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY LENGTH: 0.185 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN CONTROL REFERENCE: DS55463H
DESIGN FUNCTION AND QUANTITY: 2 DRIVER, PERIPHERAL
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MANUFACTURERS CODE: 27014
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA: