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5962-01-067-8372

20 Products

SCD 11333

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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SCD 11333

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

L-3 SERVICES INC. DBA LINKABIT DIV LINKABIT

DMS 89120B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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DMS 89120B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

DLA LAND AND MARITIME

F40161

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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F40161

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

FAIRCHILD SEMICONDUCTOR CORP

MC14161B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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MC14161B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

FREESCALE SEMICONDUCTOR INC.

MC14161BALDS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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MC14161BALDS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

FREESCALE SEMICONDUCTOR INC.

MM54C161D/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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MM54C161D/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

NATIONAL SEMICONDUCTOR CORPORATION

MM54C161J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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MM54C161J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

NATIONAL SEMICONDUCTOR CORPORATION

MM74C161NBPLUS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

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MM74C161NBPLUS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010678372

NSN

5962-01-067-8372

MFG

NATIONAL SEMICONDUCTOR CORPORATION

23-040A1-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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23-040A1-00

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

COMPAQ FEDERAL LLC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

23040A1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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23040A1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

COMPAQ FEDERAL LLC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

23040A1-03

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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23040A1-03

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

23040A1-04

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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23040A1-04

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

23040A1-05

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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23040A1-05

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

6330-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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6330-1J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

A-PS-23040A1-0-0

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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A-PS-23040A1-0-0

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

COMPAQ FEDERAL LLC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

IM5600CDE

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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IM5600CDE

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N8223F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

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N8223F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010678373

NSN

5962-01-067-8373

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

58082-90015

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010679309

NSN

5962-01-067-9309

View More Info

58082-90015

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010679309

NSN

5962-01-067-9309

MFG

AAI CORPORATION

Description

MANUFACTURERS CODE: 97384
MFR SOURCE CONTROLLING REFERENCE: 58082-90015
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 1.90 IN. LG,0.79 IN. W,0.14 IN. DP;12 BIT HIGH RELIABILITY;MAX RATED OUTPUT CURRENT 5.0 MA; CONVERTER, ANALOG TO DIGITAL

DAC-85-CBI-V/B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010679309

NSN

5962-01-067-9309

View More Info

DAC-85-CBI-V/B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962010679309

NSN

5962-01-067-9309

MFG

SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER

Description

MANUFACTURERS CODE: 97384
MFR SOURCE CONTROLLING REFERENCE: 58082-90015
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 1.90 IN. LG,0.79 IN. W,0.14 IN. DP;12 BIT HIGH RELIABILITY;MAX RATED OUTPUT CURRENT 5.0 MA; CONVERTER, ANALOG TO DIGITAL

7585722P1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010679323

NSN

5962-01-067-9323

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7585722P1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010679323

NSN

5962-01-067-9323

MFG

LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS

Description

BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.715 INCHES NOMINAL
BODY WIDTH: 1.215 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE AND 1 BUFFER
III END ITEM IDENTIFICATION: F111D
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS