My Quote Request
5962-01-067-8372
20 Products
SCD 11333
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
L-3 SERVICES INC. DBA LINKABIT DIV LINKABIT
Description
MICROCIRCUIT,DIGITAL
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DMS 89120B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,DIGITAL
Related Searches:
F40161
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
MICROCIRCUIT,DIGITAL
Related Searches:
MC14161B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
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MC14161BALDS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
FREESCALE SEMICONDUCTOR INC.
Description
MICROCIRCUIT,DIGITAL
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MM54C161D/883
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
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MM54C161J/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
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MM74C161NBPLUS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010678372
NSN
5962-01-067-8372
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
Related Searches:
23-040A1-00
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
COMPAQ FEDERAL LLC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
23040A1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
COMPAQ FEDERAL LLC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
23040A1-03
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
23040A1-04
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
23040A1-05
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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6330-1J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
A-PS-23040A1-0-0
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
COMPAQ FEDERAL LLC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
IM5600CDE
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
INTERSIL INC SUB OF GENERAL ELECTRIC CO
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N8223F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010678373
NSN
5962-01-067-8373
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.855 INCHES MAXIMUM
BODY WIDTH: 0.200 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND W/ENABLE AND W/DISABLE AND W/OPEN COLLECTOR AND W/DECODED OUTPUT AND HIGH SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 650.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 15476-23040A1 SPECIFICATION
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
58082-90015
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010679309
NSN
5962-01-067-9309
58082-90015
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010679309
NSN
5962-01-067-9309
MFG
AAI CORPORATION
Description
MANUFACTURERS CODE: 97384
MFR SOURCE CONTROLLING REFERENCE: 58082-90015
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 1.90 IN. LG,0.79 IN. W,0.14 IN. DP;12 BIT HIGH RELIABILITY;MAX RATED OUTPUT CURRENT 5.0 MA; CONVERTER, ANALOG TO DIGITAL
Related Searches:
DAC-85-CBI-V/B
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010679309
NSN
5962-01-067-9309
DAC-85-CBI-V/B
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962010679309
NSN
5962-01-067-9309
MFG
SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER
Description
MANUFACTURERS CODE: 97384
MFR SOURCE CONTROLLING REFERENCE: 58082-90015
SPEC/STD CONTROLLING DATA:
SPECIAL FEATURES: 1.90 IN. LG,0.79 IN. W,0.14 IN. DP;12 BIT HIGH RELIABILITY;MAX RATED OUTPUT CURRENT 5.0 MA; CONVERTER, ANALOG TO DIGITAL
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7585722P1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010679323
NSN
5962-01-067-9323
MFG
LOCKHEED MARTIN CORP NAVAL ELECTRONICS & SURVEILLANCE SYSTEMS
Description
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.715 INCHES NOMINAL
BODY WIDTH: 1.215 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, GENERAL PURPOSE AND 1 BUFFER
III END ITEM IDENTIFICATION: F111D
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: METAL
OPERATING TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

