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5962-01-073-8506

20 Products

19-186F21

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738506

NSN

5962-01-073-8506

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19-186F21

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738506

NSN

5962-01-073-8506

MFG

CONCURRENT COMPUTER CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND W/DECODED OUTPUT AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/STROBE AND EXPANDABLE AND BIPOLAR AND SCHOTTKY AND MEDIUM SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30331-19-186F21 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

615744-901

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738364

NSN

5962-01-073-8364

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615744-901

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738364

NSN

5962-01-073-8364

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.575 INCHES MINIMUM AND 0.605 INCHES MAXIMUM
BODY LENGTH: 1.980 INCHES MINIMUM AND 2.020 INCHES MAXIMUM
BODY WIDTH: 0.105 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615744-901
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 37695
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:

615730-903

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738365

NSN

5962-01-073-8365

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615730-903

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738365

NSN

5962-01-073-8365

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.786 INCHES MAXIMUM
BODY WIDTH: 0.120 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 615730-903
FEATURES PROVIDED: HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: 37695
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:

615755-901

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738366

NSN

5962-01-073-8366

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615755-901

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738366

NSN

5962-01-073-8366

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM91L30BDM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738366

NSN

5962-01-073-8366

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AM91L30BDM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738366

NSN

5962-01-073-8366

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MINIMUM AND 1.110 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MINIMUM AND 0.410 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND LOW POWER AND ELECTROSTATIC SENSITIVE AND BIDIRECTIONAL AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 19 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.25 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 400.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

57650005D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

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57650005D

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

MFG

THALES TRAINING & SIMULATION LTD

Description

BODY HEIGHT: 0.140 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 2 DECODER, TWO TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

IC3316A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

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IC3316A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

MFG

SCHLUMBERGER INDUSTRIES

Description

BODY HEIGHT: 0.140 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 2 DECODER, TWO TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

IC3316A01/N0101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

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IC3316A01/N0101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

MFG

SCHLUMBERGER INDUSTRIES

Description

BODY HEIGHT: 0.140 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 2 DECODER, TWO TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN74LS155AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

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SN74LS155AN

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

MFG

KREISLER IMPORT BV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 2 DECODER, TWO TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN74LS155N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

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SN74LS155N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738371

NSN

5962-01-073-8371

MFG

TEXAS INSTRUMENTS INC INFORMATION TECHNOLOGY GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM
DESIGN FUNCTION AND QUANTITY: 2 DECODER, TWO TO FOUR LINE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

DAC85LD-CBI-V

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010738499

NSN

5962-01-073-8499

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DAC85LD-CBI-V

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010738499

NSN

5962-01-073-8499

MFG

BURR-BROWN CORP

Description

BODY HEIGHT: 0.220 INCHES NOMINAL
BODY LENGTH: 1.400 INCHES NOMINAL
BODY WIDTH: 0.800 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS AND BIPOLAR AND ADJUSTABLE
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: BODY AND TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS NOMINAL PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT

19-188F15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738501

NSN

5962-01-073-8501

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19-188F15

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738501

NSN

5962-01-073-8501

MFG

CONCURRENT COMPUTER CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.252 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

N82S129N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738501

NSN

5962-01-073-8501

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N82S129N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738501

NSN

5962-01-073-8501

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.252 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

19-188F16

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738502

NSN

5962-01-073-8502

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19-188F16

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738502

NSN

5962-01-073-8502

MFG

CONCURRENT COMPUTER CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: MO-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: SYNCHRONOUS AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND LOW POWER AND W/CLEAR AND PRESETTABLE AND HIGH SPEED AND W/BUFFERED OUTPUT AND EDGE TRIGGERED AND W/DISABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30331-19-188F16 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N82S129N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738502

NSN

5962-01-073-8502

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N82S129N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010738502

NSN

5962-01-073-8502

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.055 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: MO-001-AE JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: SYNCHRONOUS AND MONOLITHIC AND W/ENABLE AND SCHOTTKY AND LOW POWER AND W/CLEAR AND PRESETTABLE AND HIGH SPEED AND W/BUFFERED OUTPUT AND EDGE TRIGGERED AND W/DISABLE AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 60.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30331-19-188F16 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

19-188F17

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738503

NSN

5962-01-073-8503

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19-188F17

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738503

NSN

5962-01-073-8503

MFG

CONCURRENT COMPUTER CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.252 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

N82S129N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738503

NSN

5962-01-073-8503

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N82S129N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738503

NSN

5962-01-073-8503

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.252 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

19-188F18

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738504

NSN

5962-01-073-8504

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19-188F18

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738504

NSN

5962-01-073-8504

MFG

CONCURRENT COMPUTER CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.252 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

N82S129N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738504

NSN

5962-01-073-8504

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N82S129N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738504

NSN

5962-01-073-8504

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.125 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.755 INCHES MAXIMUM
BODY WIDTH: 0.252 INCHES MINIMUM AND 0.290 INCHES MAXIMUM
FEATURES PROVIDED: PROGRAMMABLE AND 3-STATE OUTPUT AND W/ENABLE AND POSITIVE OUTPUTS AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

19-186F29

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738505

NSN

5962-01-073-8505

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19-186F29

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010738505

NSN

5962-01-073-8505

MFG

CONCURRENT COMPUTER CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.590 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND PROGRAMMED AND W/ENABLE AND W/DECODED OUTPUT AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED AND W/STROBE AND EXPANDABLE AND BIPOLAR AND SCHOTTKY AND MEDIUM SPEED AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 14 INPUT
MAXIMUM POWER DISSIPATION RATING: 1000.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TEST DATA DOCUMENT: 30331-19-186F29 DRAWING
TIME RATING PER CHACTERISTIC: 60.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE