My Quote Request
5962-01-078-3720
20 Products
LM143H/883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010783720
NSN
5962-01-078-3720
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH VOLTAGE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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3499666
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010783720
NSN
5962-01-078-3720
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH VOLTAGE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
LM143H/883
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962010783720
NSN
5962-01-078-3720
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH VOLTAGE AND HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
339267
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783722
NSN
5962-01-078-3722
MFG
TELEMECHANICS INC
Description
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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N8267
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783722
NSN
5962-01-078-3722
MFG
FREESCALE SEMICONDUCTOR INC.
Description
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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339731
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783725
NSN
5962-01-078-3725
MFG
TELEMECHANICS INC
Description
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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04EM142-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
RAYTHEON CO ESD LONG ISLAND DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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100001521
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
DATA GENERAL CORP M/S 9S17
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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1202228-301
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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13152880-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
210-123-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
RAYTHEON COMPANY DBA RAYTHEON DIV INTELLIGENCE AND INFORMATION SYSTEMS
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2M829-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2M841-101
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
NORTHROP GRUMMAN CORP ELECTRONIC SYSTEMS DEFENSIVE SYSTEM DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
3596436-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS FORMER TEST SYSTEMS DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54S241/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
54S241JB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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63A140388P152-7
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN SIMULATION TRAINING & SUPPORT
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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7136444-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010783730
NSN
5962-01-078-3730
MFG
LITTON SYSTEMS INC GUIDANCE AND CONTROL SYSTEMS DIV
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MINIMUM AND 0.975 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 BUFFER
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND 3-STATE OUTPUT AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 538.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 9.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE