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5962-01-081-5339

20 Products

ROM/PROM FAMILY 030

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010815339

NSN

5962-01-081-5339

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ROM/PROM FAMILY 030

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010815339

NSN

5962-01-081-5339

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/DECODED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97942-637A594 DRAWING
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

B1633-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010815339

NSN

5962-01-081-5339

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B1633-2

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962010815339

NSN

5962-01-081-5339

MFG

HARRIS CORPORATION DBA GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION DIV GOVERNMENT COMMUNICATIONS SYSTEMS DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.930 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/STORAGE AND PROGRAMMABLE AND PROGRAMMED AND BIPOLAR AND W/DECODED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 97942-637A594 DRAWING
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

1826-0111

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

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1826-0111

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ADJUSTABLE AND INTERNALLY COMPENSATED AND BIPOLAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 30.0 VOLTS MAXIMUM POWER SOURCE

510090400

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

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510090400

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

MFG

SCHLUMBERGER INDUSTRIES SA EQUIPEMENTS DE TEST AUTOMATIQUES

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ADJUSTABLE AND INTERNALLY COMPENSATED AND BIPOLAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 30.0 VOLTS MAXIMUM POWER SOURCE

CF147T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

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CF147T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ADJUSTABLE AND INTERNALLY COMPENSATED AND BIPOLAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 30.0 VOLTS MAXIMUM POWER SOURCE

MC1458G

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

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MC1458G

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ADJUSTABLE AND INTERNALLY COMPENSATED AND BIPOLAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 30.0 VOLTS MAXIMUM POWER SOURCE

SC25055GK

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

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SC25055GK

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962010815414

NSN

5962-01-081-5414

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND ADJUSTABLE AND INTERNALLY COMPENSATED AND BIPOLAR
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 680.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 30.0 VOLTS MAXIMUM POWER SOURCE

9900-00012

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815639

NSN

5962-01-081-5639

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9900-00012

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815639

NSN

5962-01-081-5639

MFG

BAE SYSTEMS OPERATIONS LTD

Description

BODY HEIGHT: 0.300 INCHES NOMINAL
BODY LENGTH: 0.900 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
BODY WIDTH: 0.490 INCHES MINIMUM AND 0.510 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 9900-00012
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
III END ITEM IDENTIFICATION: F-16A/B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MANUFACTURERS CODE: K0656
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
THE MANUFACTURERS DATA:

583R305H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815640

NSN

5962-01-081-5640

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583R305H01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815640

NSN

5962-01-081-5640

MFG

NORTHROP GRUMMAN SYSTEMS CORPORATION DIV NORTHROP GRUMMAN SYSTEMS CORPORATION ELECTRONIC SYSTEMS

Description

DESIGN CONTROL REFERENCE: 583R305H01
DESIGN FUNCTION AND QUANTITY: 1 GENERATOR, CARRY, LOOK AHEAD
III END ITEM IDENTIFICATION: F-16 A/B
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 16 INPUT
MANUFACTURERS CODE: 97942
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
THE MANUFACTURERS DATA:

34031052-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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34031052-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

SYPRIS ELECTRONICS LLC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

54LS251J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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54LS251J/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

7117575-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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7117575-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

F54LS251DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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F54LS251DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

S54LS251F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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S54LS251F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SN54LS251BJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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SN54LS251BJ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

SNC54LS251J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

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SNC54LS251J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815643

NSN

5962-01-081-5643

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, EIGHT TO ONE LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

165325-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

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165325-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.754 INCHES MINIMUM AND 0.767 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER AND 1 TIMER
FEATURES PROVIDED: PROGRAMMABLE AND W/RESET AND CASCADABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

2240CP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

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2240CP

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

MFG

EXAR INTEGRATED SYSTEMS

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.754 INCHES MINIMUM AND 0.767 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER AND 1 TIMER
FEATURES PROVIDED: PROGRAMMABLE AND W/RESET AND CASCADABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

2612523-201

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

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2612523-201

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

MFG

ALLIANT TECHSYSTEMS INC . DIV DEFENSE ELECTRONICS SYSTEMS

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.754 INCHES MINIMUM AND 0.767 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER AND 1 TIMER
FEATURES PROVIDED: PROGRAMMABLE AND W/RESET AND CASCADABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

XR-2240M-XL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

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XR-2240M-XL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010815829

NSN

5962-01-081-5829

MFG

EXAR INTEGRATED SYSTEMS

Description

BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.754 INCHES MINIMUM AND 0.767 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER AND 1 TIMER
FEATURES PROVIDED: PROGRAMMABLE AND W/RESET AND CASCADABLE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 750.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS