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5962-01-088-4261

20 Products

SM-A-942691

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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SM-A-942691

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

51NW9615B35

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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51NW9615B35

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

725000-103

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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725000-103

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

725000-590

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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725000-590

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

725000-987

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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725000-987

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

8T26A/BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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8T26A/BEA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

917AS6064

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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917AS6064

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

NAVAL AIR SYSTEMS COMMAND

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

AM8T26ADMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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AM8T26ADMB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DST26AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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DST26AMJ883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MC6880L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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MC6880L

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

MC8T26A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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MC8T26A

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N8T26F-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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N8T26F-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

RB8T26F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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RB8T26F

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S8T26AF/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

View More Info

S8T26AF/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S8T26AF/883C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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S8T26AF/883C

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S8T26AF/883E

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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S8T26AF/883E

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S8T26AFB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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S8T26AFB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S8T26F-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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S8T26F-B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

S8T26F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

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S8T26F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884261

NSN

5962-01-088-4261

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 TRANSCEIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: TRANSMITTING SET,RADAR DATA TYPE AN/AKT-18
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 457.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 80063-SM-A-942691 DRAWING
TIME RATING PER CHACTERISTIC: 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 14.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

93S12DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884263

NSN

5962-01-088-4263

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93S12DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962010884263

NSN

5962-01-088-4263

MFG

FAIRCHILD SEMICONDUCTOR CORP COMPONENTS GROUP SUB OF SCHLUMBERGER LTD

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND W/DECODED OUTPUT AND W/BUFFERED OUTPUT AND COMPLEMENTARY OUTPUTS AND SCHOTTKY AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 34148-93S12DMQB DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE