My Quote Request
5962-01-097-7492
20 Products
V3724-Z8708-X2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
SIEMENS SCHWEIZ AG
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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85599700-03
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010977491
NSN
5962-01-097-7491
MFG
GENERAL DYNAMICS INFORMATION SYSTEMS INC. DBA GENERAL DYNAMICS ADVANCED INFORMATION SYSTEMS
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND RESETTABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 75.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC10531BEBJC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962010977491
NSN
5962-01-097-7491
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.275 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND ASYNCHRONOUS AND RESETTABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 9 INPUT
MAXIMUM POWER DISSIPATION RATING: 75.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MAXIMUM POWER SOURCE
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2708
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5013416
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
NAVAL SEA SYSTEMS COMMAND
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5218-162
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
810-1-200695
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
CAE USA INC. DIV SIMULATOR PRODUCTS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
810-1-200695-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
CAE USA INC. DIV SIMULATOR PRODUCTS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
810-1-200696
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
CAE USA INC. DIV SIMULATOR PRODUCTS DIVISION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM2708DC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM9708DM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B2708-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D2708-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DMS 86003B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N82S2708F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
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TMS2708JL
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962010977492
NSN
5962-01-097-7492
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 1.290 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND PROGRAMMED AND W/STORAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 580.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE