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5962-01-100-9898

20 Products

SN55122J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

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SN55122J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

32-4445

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009884

NSN

5962-01-100-9884

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32-4445

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009884

NSN

5962-01-100-9884

MFG

THALES UK LIMITED

Description

BODY HEIGHT: 0.141 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 STAGE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-OXIDIZED-SILICON LOGIC AND METAL OXIDE-SEMICONDUCTOR LOGIC

CD4015BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009884

NSN

5962-01-100-9884

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CD4015BE

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009884

NSN

5962-01-100-9884

MFG

INTERSIL CORPORATION

Description

BODY HEIGHT: 0.141 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES NOMINAL
BODY WIDTH: 0.250 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: DUAL 4 STAGE
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-OXIDIZED-SILICON LOGIC AND METAL OXIDE-SEMICONDUCTOR LOGIC

7000-03-4800

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011009885

NSN

5962-01-100-9885

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7000-03-4800

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011009885

NSN

5962-01-100-9885

MFG

WAVETEK U S INC DIV OF WAVETEK CORP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH GAIN AND INTERNALLY COMPENSATED AND LOW CURRENT AND LOW VOLTAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 875.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

LM348N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011009885

NSN

5962-01-100-9885

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LM348N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011009885

NSN

5962-01-100-9885

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.710 INCHES MINIMUM AND 0.780 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HIGH GAIN AND INTERNALLY COMPENSATED AND LOW CURRENT AND LOW VOLTAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 875.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

MC14514BBJBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009890

NSN

5962-01-100-9890

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MC14514BBJBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009890

NSN

5962-01-100-9890

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.100 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 1.180 INCHES MINIMUM AND 1.220 INCHES MAXIMUM
BODY WIDTH: 0.585 INCHES MINIMUM AND 0.615 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, FOUR TO SIXTEEN LINE AND 1 LATCH
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE AND W/STROBE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 6 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 1100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

115210-0003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009892

NSN

5962-01-100-9892

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115210-0003

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009892

NSN

5962-01-100-9892

MFG

THALES ATM INC.

Description

(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND EXPANDABLE AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 750.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 750.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

6L.5442.428.00-153545

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009892

NSN

5962-01-100-9892

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6L.5442.428.00-153545

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009892

NSN

5962-01-100-9892

MFG

SELEX COMMUNICATIONS GMBH

Description

(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND EXPANDABLE AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 750.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 750.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

MC14585BBEBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009892

NSN

5962-01-100-9892

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MC14585BBEBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009892

NSN

5962-01-100-9892

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 4
(NON-CORE DATA) WORD QUANTITY: 2
BODY HEIGHT: 0.160 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.295 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, MAGNITUDE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND EXPANDABLE AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 750.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 750.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

477-1538-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

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477-1538-001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

MFG

BOEING COMPANY THE DBA BOEING DIV DEFENSE SPACE & SECURITY - NETWORK & SPACE SYSTEMS

Description

BODY HEIGHT: 0.183 INCHES MAXIMUM
BODY LENGTH: 1.340 INCHES MAXIMUM
BODY WIDTH: 0.840 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND 2-PHASE AND W/BUFFERED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

DMS 86095B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

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DMS 86095B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.183 INCHES MAXIMUM
BODY LENGTH: 1.340 INCHES MAXIMUM
BODY WIDTH: 0.840 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND 2-PHASE AND W/BUFFERED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

MC6870A1.0MHZ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

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MC6870A1.0MHZ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.183 INCHES MAXIMUM
BODY LENGTH: 1.340 INCHES MAXIMUM
BODY WIDTH: 0.840 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND 2-PHASE AND W/BUFFERED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

MC6871B 1.0MHZ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

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MC6871B 1.0MHZ

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009896

NSN

5962-01-100-9896

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.183 INCHES MAXIMUM
BODY LENGTH: 1.340 INCHES MAXIMUM
BODY WIDTH: 0.840 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 OSCILLATOR, CRYSTAL CONTROLLED
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND 2-PHASE AND W/BUFFERED OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS MAXIMUM POWER SOURCE

3214006-001-556

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009897

NSN

5962-01-100-9897

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3214006-001-556

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009897

NSN

5962-01-100-9897

MFG

LOCKHEED MARTIN CORPORATION DIV LOCKHEED MARTIN INFORMATION SYSTEMS & GLOBAL SOLUTIONS

Description

(NON-CORE DATA) BIT QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH SPEED AND W/STORAGE AND POSITIVE OUTPUTS AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

M38510/82S11BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009897

NSN

5962-01-100-9897

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M38510/82S11BEB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009897

NSN

5962-01-100-9897

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH SPEED AND W/STORAGE AND POSITIVE OUTPUTS AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

S82S11F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009897

NSN

5962-01-100-9897

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S82S11F/883B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009897

NSN

5962-01-100-9897

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND 3-STATE OUTPUT AND HIGH SPEED AND W/STORAGE AND POSITIVE OUTPUTS AND W/DISABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 512.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD

55122DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

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55122DM

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

7910098-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

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7910098-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

MFG

L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATIONS SYSTEMS WEST DIV COMMUNICATION SYSTEMS WEST

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DS55122J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

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DS55122J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ES48TTL-75122

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

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ES48TTL-75122

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011009898

NSN

5962-01-100-9898

MFG

GOULD INC SIMULATION SYSTEMS DIV

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 3 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 11 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE