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5962-01-105-8561

20 Products

M38510/30001BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

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M38510/30001BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30001BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 24.4 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/300
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/300/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

JM38510/30001BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

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JM38510/30001BDX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30001BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 24.4 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/300
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/300/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510-30001BAX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

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M38510-30001BAX

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30001BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 24.4 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/300
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/300/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/30001BAB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

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M38510/30001BAB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30001BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 24.4 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/300
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/300/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/30001BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

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M38510/30001BDA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30001BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 24.4 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/300
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/300/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

M38510/30001BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

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M38510/30001BDB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058561

NSN

5962-01-105-8561

MFG

MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M

Description

BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.390 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-2 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/30001BDA
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND LOW POWER AND SCHOTTKY AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MANUFACTURERS CODE: 81349
MAXIMUM POWER DISSIPATION RATING: 24.4 MILLIWATTS
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/300
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
SPEC/STD CONTROLLING DATA:
SPECIFICATION/STANDARD DATA: 81349-MIL-M-38510/300/USAF/ GOVERNMENT SPECIFICATION
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 20.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 24.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SNC54LS00W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058562

NSN

5962-01-105-8562

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SNC54LS00W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058562

NSN

5962-01-105-8562

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SNC54LS00W-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058562

NSN

5962-01-105-8562

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SNC54LS00W-00

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058562

NSN

5962-01-105-8562

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SNJ54LS00W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058562

NSN

5962-01-105-8562

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SNJ54LS00W

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058562

NSN

5962-01-105-8562

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.050 INCHES MINIMUM AND 0.080 INCHES MAXIMUM
BODY LENGTH: 0.337 INCHES MINIMUM AND 0.350 INCHES MAXIMUM
BODY WIDTH: 0.235 INCHES MINIMUM AND 0.265 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 2.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 FLAT LEADS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

0N246963-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058805

NSN

5962-01-105-8805

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0N246963-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058805

NSN

5962-01-105-8805

MFG

NATIONAL SECURITY AGENCY

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 0N288752-1
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, TRANSISTOR
FEATURES PROVIDED: MONOLITHIC AND SELECTED ITEM AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: HRR
INCLOSURE CONFIGURATION: FLAT PACK
MANUFACTURERS CODE: 98230
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: REF VOLTAGE EMMITER TO BASE;INTERCHANGEABLE WITH 0N246963 REV C
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 98230-0N288752 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL REFERENCE

0N288752-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058805

NSN

5962-01-105-8805

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0N288752-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011058805

NSN

5962-01-105-8805

MFG

NATIONAL SECURITY AGENCY

Description

BODY HEIGHT: 0.030 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.280 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN CONTROL REFERENCE: 0N288752-1
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, TRANSISTOR
FEATURES PROVIDED: MONOLITHIC AND SELECTED ITEM AND HERMETICALLY SEALED
III END ITEM IDENTIFICATION: HRR
INCLOSURE CONFIGURATION: FLAT PACK
MANUFACTURERS CODE: 98230
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: REF VOLTAGE EMMITER TO BASE;INTERCHANGEABLE WITH 0N246963 REV C
TERMINAL TYPE AND QUANTITY: 14 PIN
TEST DATA DOCUMENT: 98230-0N288752 DRAWING
THE MANUFACTURERS DATA:
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.0 VOLTS NOMINAL REFERENCE

MC79L18ACG

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011059082

NSN

5962-01-105-9082

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MC79L18ACG

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011059082

NSN

5962-01-105-9082

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY LENGTH: 0.250 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.360 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: T0-39 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
OPERATING TEMP RANGE: 0.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

445/4/02756/000

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011059083

NSN

5962-01-105-9083

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445/4/02756/000

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011059083

NSN

5962-01-105-9083

MFG

SIEMENS AIR TRAFFIC MANAGEMENT

Description

BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.378 INCHES NOMINAL
BODY WIDTH: 0.246 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

9638TC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011059083

NSN

5962-01-105-9083

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9638TC

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011059083

NSN

5962-01-105-9083

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES NOMINAL
BODY LENGTH: 0.378 INCHES NOMINAL
BODY WIDTH: 0.246 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

MN5201H

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011059084

NSN

5962-01-105-9084

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MN5201H

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011059084

NSN

5962-01-105-9084

MFG

SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER

Description

BODY HEIGHT: 0.200 INCHES NOMINAL
BODY LENGTH: 1.735 INCHES NOMINAL
BODY WIDTH: 1.125 INCHES NOMINAL
INCLOSURE CONFIGURATION: DUAL-IN-LINE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

080D659

MICROCIRCUIT

NSN, MFG P/N

5962011059681

NSN

5962-01-105-9681

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080D659

MICROCIRCUIT

NSN, MFG P/N

5962011059681

NSN

5962-01-105-9681

MFG

RAYTHEON COMPANY

3556250

MICROCIRCUIT

NSN, MFG P/N

5962011059681

NSN

5962-01-105-9681

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3556250

MICROCIRCUIT

NSN, MFG P/N

5962011059681

NSN

5962-01-105-9681

MFG

RAYTHEON COMPANY

3231

INTEGRATED CIRCUIT

NSN, MFG P/N

5962011059718

NSN

5962-01-105-9718

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3231

INTEGRATED CIRCUIT

NSN, MFG P/N

5962011059718

NSN

5962-01-105-9718

MFG

CROWN AUDIO INC. DBA CROWN INTERNATIONAL

C3231-5

INTEGRATED CIRCUIT

NSN, MFG P/N

5962011059718

NSN

5962-01-105-9718

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C3231-5

INTEGRATED CIRCUIT

NSN, MFG P/N

5962011059718

NSN

5962-01-105-9718

MFG

CROWN AUDIO INC. DBA CROWN INTERNATIONAL

23-139A1-00

INTEGRATED CIRCUIT

NSN, MFG P/N

5962011059720

NSN

5962-01-105-9720

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23-139A1-00

INTEGRATED CIRCUIT

NSN, MFG P/N

5962011059720

NSN

5962-01-105-9720

MFG

COMPAQ FEDERAL LLC