My Quote Request
5962-01-107-9609
20 Products
ZD4902/1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011079609
NSN
5962-01-107-9609
MFG
SAAB AB PUPL - ELECTRONIC DEFENCE SYSTEMS
Description
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: MO-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-OXIDIZED-SILICON LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION OR 96906-883 STANDARD
Related Searches:
F4002BDMQB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011079609
NSN
5962-01-107-9609
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.770 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: MO-001-AB JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 GATE, NOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-OXIDIZED-SILICON LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION OR 96906-883 STANDARD
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7912KM
INTEGRATED,CIRCUIT
NSN, MFG P/N
5962011079823
NSN
5962-01-107-9823
MFG
HARRIS CORPORATION DBA HARRIS RF COMMUNICATION
Description
INTEGRATED,CIRCUIT
Related Searches:
16U569-7
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011080297
NSN
5962-01-108-0297
MFG
LOCKHEED MARTIN CORPORATION DBA LOCKHEED MARTIN DIV LOCKHEED MARTIN AERONAUTICS COMPANY
Description
FEATURES PROVIDED: PROGRAMMED
III END ITEM IDENTIFICATION: F-16
INCLOSURE CONFIGURATION: DUAL-IN-LINE
Related Searches:
1280-FCQ3724-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011080298
NSN
5962-01-108-0298
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
III END ITEM IDENTIFICATION: EF-111A
MANUFACTURERS CODE: 72314
MFR SOURCE CONTROLLING REFERENCE: 1280-FCQ3724-1
SPEC/STD CONTROLLING DATA:
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
43007-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080299
NSN
5962-01-108-0299
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
5331-1D/883C
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080299
NSN
5962-01-108-0299
MFG
MMI/AMD
Description
MICROCIRCUIT,MEMORY
Related Searches:
722913-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080299
NSN
5962-01-108-0299
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722913-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080299
NSN
5962-01-108-0299
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM FAMILY 013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080299
NSN
5962-01-108-0299
ROM/PROM FAMILY 013
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080299
NSN
5962-01-108-0299
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
43002-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080300
NSN
5962-01-108-0300
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC AND W/ENABLE AND W/BUFFERED OUTPUT
III END ITEM IDENTIFICATION: CENTRAL,OPERATIONAL CONTROL AN/FYQ-93
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
722912-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080300
NSN
5962-01-108-0300
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC AND W/ENABLE AND W/BUFFERED OUTPUT
III END ITEM IDENTIFICATION: CENTRAL,OPERATIONAL CONTROL AN/FYQ-93
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080300
NSN
5962-01-108-0300
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080300
NSN
5962-01-108-0300
MFG
DEFENSE ELECTRONICS SUPPLY CENTER
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC AND W/ENABLE AND W/BUFFERED OUTPUT
III END ITEM IDENTIFICATION: CENTRAL,OPERATIONAL CONTROL AN/FYQ-93
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
42994-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080303
NSN
5962-01-108-0303
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
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722912-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080303
NSN
5962-01-108-0303
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
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ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080303
NSN
5962-01-108-0303
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080303
NSN
5962-01-108-0303
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
42995-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080304
NSN
5962-01-108-0304
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722912-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080304
NSN
5962-01-108-0304
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080304
NSN
5962-01-108-0304
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080304
NSN
5962-01-108-0304
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
42996-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011080305
NSN
5962-01-108-0305
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY