My Quote Request
5962-01-108-4746
20 Products
TS-3347
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011084746
NSN
5962-01-108-4746
MFG
MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE
Description
BODY HEIGHT: 0.415 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.470 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 65.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 20.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM25LS240DC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084750
NSN
5962-01-108-4750
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.935 INCHES MINIMUM AND 0.970 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM25LS240DMB
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084750
NSN
5962-01-108-4750
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 0.935 INCHES MINIMUM AND 0.970 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 8 DRIVER, INVERTING
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 5 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
41361-238-00-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM2716-1DC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
AM2716-1DI
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B2716-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
D2716-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M2716-1F1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM2716-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM27169-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM2716Q-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
P2716-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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TMS2516-35JL
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011084751
NSN
5962-01-108-4751
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 16384
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM
BODY WIDTH: 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND LOW POWER AND PROGRAMMABLE AND SCHOTTKY AND W/ENABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 525.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1654/BEAJC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084752
NSN
5962-01-108-4752
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND NEGATIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 12436-6010269 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MINIMUM POWER SOURCE AND 0.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1654/BEBJC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084752
NSN
5962-01-108-4752
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND NEGATIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 12436-6010269 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MINIMUM POWER SOURCE AND 0.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6010269-001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084752
NSN
5962-01-108-4752
MFG
BAE SYSTEMS NATIONAL SECURITY SOLUTIONS INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND NEGATIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 12436-6010269 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MINIMUM POWER SOURCE AND 0.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
845642-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084752
NSN
5962-01-108-4752
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND NEGATIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 12436-6010269 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MINIMUM POWER SOURCE AND 0.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MC1654BEBS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011084752
NSN
5962-01-108-4752
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.120 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.870 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND W/ENABLE AND NEGATIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -30.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 12436-6010269 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -8.0 VOLTS MINIMUM POWER SOURCE AND 0.0 VOLTS MAXIMUM POWER SOURCE