My Quote Request
5962-01-109-9745
20 Products
SN53507
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099745
NSN
5962-01-109-9745
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 28.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
CD2074N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099745
NSN
5962-01-109-9745
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 28.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SC68023PK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099745
NSN
5962-01-109-9745
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 28.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SL62692
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099745
NSN
5962-01-109-9745
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.640 INCHES MINIMUM AND 0.790 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: LOW POWER AND SCHOTTKY AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 32.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 28.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
1820-1215
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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640-096
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
RADIOSPARES SAS
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
74LS136N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CD2145
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DM74LS136N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN53521
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
SN74LS136N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099746
NSN
5962-01-109-9746
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.135 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
CURRENT RATING PER CHARACTERISTIC: 10.00 MILLIAMPERES MAXIMUM SUPPLY
DESIGN FUNCTION AND QUANTITY: 4 GATE, EXCLUSIVE OR
FEATURES PROVIDED: MONOLITHIC AND SCHOTTKY AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM DELAY
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
1820-1430
MICROCIRCUIT
NSN, MFG P/N
5962011099775
NSN
5962-01-109-9775
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
MICROCIRCUIT
Related Searches:
1820-1818
MICROCIRCUIT
NSN, MFG P/N
5962011099775
NSN
5962-01-109-9775
MFG
HEWLETT PACKARD CO
Description
MICROCIRCUIT
Related Searches:
1820-1210
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099776
NSN
5962-01-109-9776
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
74LS51N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099776
NSN
5962-01-109-9776
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
DM74LS51N
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099776
NSN
5962-01-109-9776
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SC68064PK
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099776
NSN
5962-01-109-9776
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
SN53517
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099776
NSN
5962-01-109-9776
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
U74LS51
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099776
NSN
5962-01-109-9776
MFG
DRS TACTICAL SYSTEMS LTD DBA LYNWOOD
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.255 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 GATE, AND-OR INVERT
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 10.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
Related Searches:
1820-0509
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011099778
NSN
5962-01-109-9778
MFG
AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER
Description
DESIGN FUNCTION AND QUANTITY: 4 DRIVER, LINE
FEATURES PROVIDED: W/CURRENT LIMITER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS