My Quote Request
5962-01-114-8191
20 Products
HL25838
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011148191
NSN
5962-01-114-8191
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MC14163BALDS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147307
NSN
5962-01-114-7307
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM54C163J/883
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147307
NSN
5962-01-114-7307
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM54C163J/883B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147307
NSN
5962-01-114-7307
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.160 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND SYNCHRONOUS AND W/CLEAR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE
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460223-03
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147308
NSN
5962-01-114-7308
MFG
BAE SYSTEMS CONTROLS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 STAGE
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE
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BCL4024BC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147308
NSN
5962-01-114-7308
MFG
ALLEGRO MICROSYSTEMS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 STAGE
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE
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BCL4024BC-03
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147308
NSN
5962-01-114-7308
MFG
ALLEGRO MICROSYSTEMS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 STAGE
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE
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BCL4024BC-3
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147308
NSN
5962-01-114-7308
MFG
ALLEGRO MICROSYSTEMS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 STAGE
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147308
NSN
5962-01-114-7308
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 STAGE
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE
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SC4745ILH
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147308
NSN
5962-01-114-7308
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.660 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND RESETTABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 7 STAGE
MAXIMUM POWER DISSIPATION RATING: 300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE
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13041731-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
MFG
U S ARMY AVIATION AND MISSILE COMMAND
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
2804469-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
MFG
HONEYWELL INTL INC DEFENSE AVIONICS SYSTEMS
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
48-052303-02
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV ES DEFENSIVE SYSTEMS DIVISION
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
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5962-01-114-7309
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
MFG
DRS ICAS, LLC
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
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5962-01-114-7309
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147309
NSN
5962-01-114-7309
MFG
SIEMENS SCHWEIZ AG
Description
BODY HEIGHT: 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DECODER, BINARY CODED DECIMAL TO DECIMAL
FEATURES PROVIDED: HERMETICALLY SEALED AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 35.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011147889
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5962-01-114-7889
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
MICROCIRCUIT,DIGITAL
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MICROCIRCUIT,LINEAR
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5962011148191
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5962-01-114-8191
MFG
RAYTHEON COMPANY
Description
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.271 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-116 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 2 RECEIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: DUAL 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 670.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT