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5962-01-122-4432

20 Products

NLN6561A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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NLN6561A

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

MOTOROLA COMMUNICATIONS GROUP PARTS DEPT DIV OF MOTOROLA INC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

65S092

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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65S092

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

HM1-6561-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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HM1-6561-8

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

HM1-6561-9

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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HM1-6561-9

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

HM1-6561/883

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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HM1-6561/883

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

ROCHESTER ELECTRONICS LLC

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

I26-0009-000

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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I26-0009-000

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

HARRIS CORPORATION DBA HARRIS RF COMMUNICATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

IM6561MJN/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

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IM6561MJN/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224432

NSN

5962-01-122-4432

MFG

INTERSIL INC SUB OF GENERAL ELECTRIC CO

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.145 INCHES MAXIMUM
BODY LENGTH: 0.885 INCHES MINIMUM AND 0.915 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND 3-STATE OUTPUT AND SYNCHRONOUS AND HIGH PERFORMANCE AND LOW POWER
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 8.3 VOLTS MAXIMUM POWER SOURCE

445/4/03155/013

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011224433

NSN

5962-01-122-4433

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445/4/03155/013

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011224433

NSN

5962-01-122-4433

MFG

SELEX GALILEO LTD

Description

BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.148 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.263 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, DIVIDE BY TEN OR ELEVEN
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.2 VOLTS MINIMUM POWER SOURCE AND 8.0 VOLTS MAXIMUM POWER SOURCE

SP8690ADG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011224433

NSN

5962-01-122-4433

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SP8690ADG

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011224433

NSN

5962-01-122-4433

MFG

PLESSEY TRADING CORP PLESSEY OPTOELECTRONICS AND MICROWAVE

Description

BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.148 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.263 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, DIVIDE BY TEN OR ELEVEN
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.2 VOLTS MINIMUM POWER SOURCE AND 8.0 VOLTS MAXIMUM POWER SOURCE

SP8690M

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011224433

NSN

5962-01-122-4433

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SP8690M

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011224433

NSN

5962-01-122-4433

MFG

CONSOLIDATED REFINING CO

Description

BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.148 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.263 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, DIVIDE BY TEN OR ELEVEN
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH SPEED AND LOW POWER AND PROGRAMMABLE
III END ITEM IDENTIFICATION: 5811-01-088-0549 80058
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 5 INPUT
MAXIMUM POWER DISSIPATION RATING: 70.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -5.2 VOLTS MINIMUM POWER SOURCE AND 8.0 VOLTS MAXIMUM POWER SOURCE

43037

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224539

NSN

5962-01-122-4539

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43037

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224539

NSN

5962-01-122-4539

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

722906-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224539

NSN

5962-01-122-4539

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722906-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224539

NSN

5962-01-122-4539

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224539

NSN

5962-01-122-4539

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ROM/PROM FAMILY 008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224539

NSN

5962-01-122-4539

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

43038

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224540

NSN

5962-01-122-4540

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43038

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224540

NSN

5962-01-122-4540

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224540

NSN

5962-01-122-4540

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ROM/PROM FAMILY 008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224540

NSN

5962-01-122-4540

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND PROGRAMMABLE AND PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

43039

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224541

NSN

5962-01-122-4541

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43039

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224541

NSN

5962-01-122-4541

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726009-1 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

722906-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224541

NSN

5962-01-122-4541

View More Info

722906-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224541

NSN

5962-01-122-4541

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726009-1 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224541

NSN

5962-01-122-4541

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ROM/PROM FAMILY 008

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011224541

NSN

5962-01-122-4541

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
FEATURES PROVIDED: MONOLITHIC AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 05869-726009-1 DRAWING
TIME RATING PER CHACTERISTIC: 70.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

40-022792-11

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011224950

NSN

5962-01-122-4950

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40-022792-11

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011224950

NSN

5962-01-122-4950

MFG

INTERLINK COMMUNICATIONS INC

Description

BODY HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
BODY LENGTH: 1.439 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
BODY WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND MONOLITHIC
III END ITEM IDENTIFICATION: 4920-01-053-8598 81755
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 50.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 30890-40-022792 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 25.0 VOLTS MAXIMUM POWER SOURCE

LT1003MK/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011224950

NSN

5962-01-122-4950

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LT1003MK/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011224950

NSN

5962-01-122-4950

MFG

LINEAR TECHNOLOGY CORPORATION DBA LINEAR TECHNOLOGY

Description

BODY HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
BODY LENGTH: 1.439 INCHES MINIMUM AND 1.573 INCHES MAXIMUM
BODY WIDTH: 0.990 INCHES MINIMUM AND 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND MONOLITHIC
III END ITEM IDENTIFICATION: 4920-01-053-8598 81755
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 50.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 3 PIN
TEST DATA DOCUMENT: 30890-40-022792 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 25.0 VOLTS MAXIMUM POWER SOURCE