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5962-01-122-8835

20 Products

710295-10

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962011228835

NSN

5962-01-122-8835

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710295-10

MICROCIRCUIT,HYBRID

NSN, MFG P/N

5962011228835

NSN

5962-01-122-8835

MFG

RAYTHEON COMPANY DBA RAYTHEON

3636588

ADAPTER,MICROCIRCUI

NSN, MFG P/N

5962011228840

NSN

5962-01-122-8840

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3636588

ADAPTER,MICROCIRCUI

NSN, MFG P/N

5962011228840

NSN

5962-01-122-8840

MFG

RAYTHEON COMPANY

725016A0294-005

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229293

NSN

5962-01-122-9293

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725016A0294-005

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229293

NSN

5962-01-122-9293

MFG

QUARTERMASTER GENERAL

Description

BODY LENGTH: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.440 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DC
FEATURES PROVIDED: HERMETICALLY SEALED
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE CONFIGURATION: CAN
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -54.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 96906-883 STANDARD AND 96906-202 STANDARD

UT0-523R

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229293

NSN

5962-01-122-9293

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UT0-523R

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229293

NSN

5962-01-122-9293

MFG

AGILENT TECHNOLOGIES INC. DIV SEMICONDUCTOR PRODUCTS GROUP BUSINESS CENTER

Description

BODY LENGTH: 0.170 INCHES MINIMUM AND 0.180 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.440 INCHES MINIMUM AND 0.460 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, DC
FEATURES PROVIDED: HERMETICALLY SEALED
III PRECIOUS MATERIAL AND LOCATION: LEADS GOLD
INCLOSURE CONFIGURATION: CAN
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: -54.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -62.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD
TEST DATA DOCUMENT: 96906-883 STANDARD AND 96906-202 STANDARD

51-P08704T001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

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51-P08704T001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

MFG

GENERAL DYNAMICS C4 SYSTEMS INC.

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, AUDIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/AUTOMATIC GAIN CONTROL AND MONOLITHIC AND W/RESISTOR
III OVERALL LENGTH: 0.935 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 240.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIFICATION/STANDARD DATA: 05869-725000-24 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

725000-24

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

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725000-24

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, AUDIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/AUTOMATIC GAIN CONTROL AND MONOLITHIC AND W/RESISTOR
III OVERALL LENGTH: 0.935 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 240.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIFICATION/STANDARD DATA: 05869-725000-24 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

MC1590BGCS

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

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MC1590BGCS

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, AUDIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/AUTOMATIC GAIN CONTROL AND MONOLITHIC AND W/RESISTOR
III OVERALL LENGTH: 0.935 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 240.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIFICATION/STANDARD DATA: 05869-725000-24 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

MC1590BGXS

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

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MC1590BGXS

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229294

NSN

5962-01-122-9294

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, AUDIO FREQUENCY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND W/AUTOMATIC GAIN CONTROL AND MONOLITHIC AND W/RESISTOR
III OVERALL LENGTH: 0.935 INCHES MAXIMUM
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 3 INPUT
MAXIMUM POWER DISSIPATION RATING: 240.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIFICATION/STANDARD DATA: 05869-725000-24 MANUFACTURERS SPECIFICATION CONTROL
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER

805539-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229295

NSN

5962-01-122-9295

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805539-1

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229295

NSN

5962-01-122-9295

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883B STANDARD

LF11202D/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229295

NSN

5962-01-122-9295

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LF11202D/883

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229295

NSN

5962-01-122-9295

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883B STANDARD

LF11202D/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229295

NSN

5962-01-122-9295

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LF11202D/883B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229295

NSN

5962-01-122-9295

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.200 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 SWITCH, ANALOG AND 1 SWITCH, FIELD EFFECT TRANSISTOR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 4 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883B STANDARD

MC79L12CG

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229297

NSN

5962-01-122-9297

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MC79L12CG

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229297

NSN

5962-01-122-9297

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY LENGTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.350 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-39 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGISTER, VOLTAGE
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
OPERATING TEMP RANGE: 0.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

SG1556T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229298

NSN

5962-01-122-9298

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SG1556T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229298

NSN

5962-01-122-9298

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: T0-99 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: LOW POWER
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

061203A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229299

NSN

5962-01-122-9299

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061203A

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229299

NSN

5962-01-122-9299

MFG

EADS DEFENCE AND SECURITY SYSTEMS LI TED

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

0P07CJ

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229299

NSN

5962-01-122-9299

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0P07CJ

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229299

NSN

5962-01-122-9299

MFG

ANALOG DEVICES INC. DIV SANTA CLARA SITE

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

41305-153-00-3

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229299

NSN

5962-01-122-9299

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41305-153-00-3

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011229299

NSN

5962-01-122-9299

MFG

BRITISH AEROSPACE DEFENCE SYSTEMS LT D T/A BAE SYSTEMS

Description

BODY LENGTH: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN

725000-267

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

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725000-267

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

74LS00DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

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74LS00DC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

9LS00DCQC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

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9LS00DCQC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC

DM54LS003/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

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DM54LS003/883

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011229300

NSN

5962-01-122-9300

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

CASE OUTLINE SOURCE AND DESIGNATOR: D-1 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC AND LOW POWER AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC