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5962-01-123-1676

20 Products

RH34432

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011231676

NSN

5962-01-123-1676

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RH34432

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011231676

NSN

5962-01-123-1676

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.597 INCHES MINIMUM AND 0.603 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND HIGH GAIN
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934187 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE

HL41537

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

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HL41537

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932681 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SCM27157F1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

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SCM27157F1

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

MFG

FREESCALE SEMICONDUCTOR INC.

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932681 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ZA02773

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

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ZA02773

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

MFG

STELLAR MICROELECTRONICS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932681 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ZM02693

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

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ZM02693

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230798

NSN

5962-01-123-0798

MFG

STELLAR MICROELECTRONICS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.440 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.285 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: F-5 MIL-M-38510
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND 3-STATE OUTPUT AND BIPOLAR
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 13 INPUT
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 82577-932681 STANDARD
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

17107

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230799

NSN

5962-01-123-0799

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17107

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230799

NSN

5962-01-123-0799

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 88818-A574A025 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

A574A025-1101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230799

NSN

5962-01-123-0799

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A574A025-1101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230799

NSN

5962-01-123-0799

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 88818-A574A025 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 031

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230799

NSN

5962-01-123-0799

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ROM/PROM FAMILY 031

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230799

NSN

5962-01-123-0799

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 88818-A574A025 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

17108

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230800

NSN

5962-01-123-0800

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17108

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230800

NSN

5962-01-123-0800

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 88818-A574A025 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

A574A025-1201

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230800

NSN

5962-01-123-0800

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A574A025-1201

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230800

NSN

5962-01-123-0800

MFG

KEARFOTT CORPORATION DBA KEARFOTT DIV GUIDANCE AND NAVIGATION DIVISION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 88818-A574A025 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 031

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230800

NSN

5962-01-123-0800

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ROM/PROM FAMILY 031

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011230800

NSN

5962-01-123-0800

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.045 INCHES MINIMUM AND 0.085 INCHES MAXIMUM
BODY LENGTH: 0.400 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.305 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: F-16 81755
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 FLAT LEADS
TEST DATA DOCUMENT: 88818-A574A025 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

58744-40224-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011231061

NSN

5962-01-123-1061

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58744-40224-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011231061

NSN

5962-01-123-1061

MFG

AAI CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4
DESIGN CONTROL REFERENCE: 58744-40224-1
FEATURES PROVIDED: PROGRAMMABLE
III END ITEM IDENTIFICATION: IRS-ALR-46/69
MANUFACTURERS CODE: 97384
THE MANUFACTURERS DATA:

16105-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011231356

NSN

5962-01-123-1356

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16105-101

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011231356

NSN

5962-01-123-1356

MFG

EXTEL CORP

932905-810

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

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932905-810

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND HIGH IMPEDANCE AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

CC6323-810

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

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CC6323-810

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

MFG

PHILIPS SEMICONDUCTORS INC

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND HIGH IMPEDANCE AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

FD1464-18758

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

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FD1464-18758

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND HIGH IMPEDANCE AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

N0078-810

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

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N0078-810

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND HIGH IMPEDANCE AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 078

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

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ROM/PROM FAMILY 078

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011231357

NSN

5962-01-123-1357

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND HIGH IMPEDANCE AND PROGRAMMABLE AND SCHOTTKY AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

934187-1B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011231676

NSN

5962-01-123-1676

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934187-1B

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011231676

NSN

5962-01-123-1676

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.597 INCHES MINIMUM AND 0.603 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND HIGH GAIN
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934187 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE

LH0033G-MIL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011231676

NSN

5962-01-123-1676

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LH0033G-MIL

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011231676

NSN

5962-01-123-1676

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.597 INCHES MINIMUM AND 0.603 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND HIGH GAIN
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 12 PIN
TEST DATA DOCUMENT: 82577-934187 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 40.0 VOLTS MAXIMUM POWER SOURCE