My Quote Request
5962-01-123-4332
20 Products
SD948
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B2052-11
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DH75699
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HL42543
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM7643
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM9-7643-B2052-11
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
HM9-7643-B2052-11
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HR10709
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
MM5353
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 017
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
ROM/PROM FAMILY 017
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234332
NSN
5962-01-123-4332
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
18529
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
27S33
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5353-1F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
53S441-F
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932883-342
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93453
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B1614-1B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
B2052-342
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DH75699
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HL42543
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM7643
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011234333
NSN
5962-01-123-4333
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE