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5962-01-123-4776

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ROM/PROM FAMILY 012

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011234776

NSN

5962-01-123-4776

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ROM/PROM FAMILY 012

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011234776

NSN

5962-01-123-4776

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932882 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

HR10609

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011234776

NSN

5962-01-123-4776

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HR10609

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011234776

NSN

5962-01-123-4776

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.080 INCHES MINIMUM AND 0.120 INCHES MAXIMUM
BODY LENGTH: 1.380 INCHES MINIMUM AND 1.430 INCHES MAXIMUM
BODY WIDTH: 0.580 INCHES MINIMUM AND 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 ARRAY, LOGIC
FEATURES PROVIDED: BIPOLAR AND BURN IN AND HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: RADAR 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 17 INPUT
MAXIMUM POWER DISSIPATION RATING: 600.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
TEST DATA DOCUMENT: 82577-932882 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

18526

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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18526

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

53S441-F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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53S441-F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

82S137

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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82S137

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

DOUBLEDAY AND CO INC

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

932750-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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932750-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

932883-314

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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932883-314

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

93453

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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93453

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

B2052-314

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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B2052-314

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

HM-7643

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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HM-7643

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

HM9-7643-B2052-314

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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HM9-7643-B2052-314

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

HR10725

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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HR10725

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM FAMILY 017

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

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ROM/PROM FAMILY 017

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234777

NSN

5962-01-123-4777

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

18528

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

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18528

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

27S33

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

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27S33

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

5353-1F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

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5353-1F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

53S441-F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

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53S441-F

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

932883-332

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

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932883-332

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

RAYTHEON COMPANY

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

93453

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

View More Info

93453

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

B1614-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

View More Info

B1614-1B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011234778

NSN

5962-01-123-4778

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.090 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
BODY WIDTH: 0.355 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND BIPOLAR AND BURN IN, MIL-STD-883, CLASS B AND ELECTROSTATIC SENSITIVE AND PROGRAMMABLE AND W/BUFFERED OUTPUT AND 3-STATE OUTPUT
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACE GOLD
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 175.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: GOLD OR SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932883 DRAWING
TIME RATING PER CHACTERISTIC: 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 75.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE