My Quote Request
5962-01-127-9565
20 Products
HM7681
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011279565
NSN
5962-01-127-9565
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
FEATURES PROVIDED: W/ENABLE AND HIGH SPEED AND 3-STATE OUTPUT AND SCHOTTKY AND PROGRAMMABLE
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
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450904-457
MICROCIRCUIT
NSN, MFG P/N
5962011279071
NSN
5962-01-127-9071
MFG
NORTHROP GRUMMAN LITEF GMBH DBA LITEF
Description
MICROCIRCUIT
Related Searches:
MB2716S0
MICROCIRCUIT
NSN, MFG P/N
5962011279071
NSN
5962-01-127-9071
MFG
INTEL CORP SALES OFFICE
Description
MICROCIRCUIT
Related Searches:
MB2716S0B
MICROCIRCUIT
NSN, MFG P/N
5962011279071
NSN
5962-01-127-9071
MFG
INTEL CORP SALES OFFICE
Description
MICROCIRCUIT
Related Searches:
HCTR0107
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011279286
NSN
5962-01-127-9286
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,DIGITAL
Related Searches:
55182DM
MICROCIRCUIT ASSEMBLY
NSN, MFG P/N
5962011279295
NSN
5962-01-127-9295
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
MICROCIRCUIT ASSEMBLY
Related Searches:
725000-422
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279559
NSN
5962-01-127-9559
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
Related Searches:
LM218D
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279559
NSN
5962-01-127-9559
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
Related Searches:
LM218DQC
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279559
NSN
5962-01-127-9559
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
Related Searches:
LM111F883B
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279560
NSN
5962-01-127-9560
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.080 INCHES MAXIMUM
BODY LENGTH: 0.275 INCHES MAXIMUM
BODY WIDTH: 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 COMPARATOR, VOLTAGE
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
Related Searches:
TDA1060
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279561
NSN
5962-01-127-9561
MFG
PHILIPS SEMICONDUCTORS INC
Description
BODY HEIGHT: 4.70 MILLIMETERS MAXIMUM
BODY LENGTH: 22.00 MILLIMETERS MAXIMUM
BODY WIDTH: 8.25 MILLIMETERS MAXIMUM
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
OPERATING TEMP RANGE: -25.0 TO 85.0 DEG CELSIUS
Related Searches:
5180396A16
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279562
NSN
5962-01-127-9562
MFG
MOTOROLA INC. DIV U.S. FEDERAL GOVERNMENT MARKETS DIVISION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.725 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
SPECIAL FEATURES: COMPATIBLE WITH ALL FORMS OF LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
LM324D
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279562
NSN
5962-01-127-9562
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.725 INCHES MAXIMUM
BODY WIDTH: 0.285 INCHES MAXIMUM
FEATURES PROVIDED: MONOLITHIC AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: GLASS AND METAL
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 900.0 MILLIWATTS
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
SPECIAL FEATURES: COMPATIBLE WITH ALL FORMS OF LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
JM38510/10602BGAA
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279563
NSN
5962-01-127-9563
JM38510/10602BGAA
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279563
NSN
5962-01-127-9563
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.350 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/10602BGA
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/106
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 81349-MIL-M-38510/106 SPECIFICATION
Related Searches:
M38510/10602BGA
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279563
NSN
5962-01-127-9563
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.350 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/10602BGA
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/106
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 81349-MIL-M-38510/106 SPECIFICATION
Related Searches:
M3851010602BGG
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011279563
NSN
5962-01-127-9563
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
BODY HEIGHT: 0.175 INCHES NOMINAL
BODY OUTSIDE DIAMETER: 0.350 INCHES NOMINAL
CASE OUTLINE SOURCE AND DESIGNATOR: A-1 MIL-M-38510
DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: M38510/10602BGA
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, HIGH SPEED
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND NEGATIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MANUFACTURERS CODE: 81349
NON-DEFINITIVE GOVERNMENT SPEC/STD REFERENCE: MIL-M-38510/106
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPEC/STD CONTROLLING DATA:
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 81349-MIL-M-38510/106 SPECIFICATION
Related Searches:
34049BDMQC
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011279564
NSN
5962-01-127-9564
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 BUFFER AND 6 CONVERTER
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
725000-571
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011279564
NSN
5962-01-127-9564
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 BUFFER AND 6 CONVERTER
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
CCL4049UBD
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011279564
NSN
5962-01-127-9564
MFG
ALLEGRO MICROSYSTEMS INC
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 BUFFER AND 6 CONVERTER
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
MM4649MJ/883C
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011279564
NSN
5962-01-127-9564
MFG
NATIONAL SEMICONDUCTOR CORPORATION
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 6 BUFFER AND 6 CONVERTER
FEATURES PROVIDED: MONOLITHIC AND ELECTROSTATIC SENSITIVE
III OVERALL HEIGHT: 0.400 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 200.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD