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5962-01-130-8656

20 Products

S5101L-3CM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308656

NSN

5962-01-130-8656

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S5101L-3CM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308656

NSN

5962-01-130-8656

MFG

SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC POCATELLO ID MANUFACTURING FACILITY DBA ON SEMICONDUCTOR

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MINIMUM AND 1.120 INCHES MAXIMUM
BODY WIDTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND W/ENABLE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8489 DRAWING
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.3 VOLTS MAXIMUM POWER SOURCE

EC96

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308656

NSN

5962-01-130-8656

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EC96

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308656

NSN

5962-01-130-8656

MFG

BAUGH & WEEDON LTD

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MINIMUM AND 1.120 INCHES MAXIMUM
BODY WIDTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND W/ENABLE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8489 DRAWING
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.3 VOLTS MAXIMUM POWER SOURCE

MW505101ADL3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308656

NSN

5962-01-130-8656

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MW505101ADL3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308656

NSN

5962-01-130-8656

MFG

INTERSIL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 1.060 INCHES MINIMUM AND 1.120 INCHES MAXIMUM
BODY WIDTH: 0.370 INCHES MINIMUM AND 0.400 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND ELECTROSTATIC SENSITIVE AND W/ENABLE
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 22 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-8489 DRAWING
TIME RATING PER CHACTERISTIC: 650.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.3 VOLTS MINIMUM POWER SOURCE AND 7.3 VOLTS MAXIMUM POWER SOURCE

351-1933-012

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

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351-1933-012

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

MFG

ROCKWELL COLLINS INC. DBA GOVERNMENT SYSTEMS DIV GOVERNMENT SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-1933 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

5308-1J/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

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5308-1J/883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-1933 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

53S280J883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

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53S280J883B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

MFG

MMI/AMD

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-1933 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

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ROM/PROM

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

MFG

DLA LAND AND MARITIME

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-1933 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

TBP28LA22MJ/B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

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TBP28LA22MJ/B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011308657

NSN

5962-01-130-8657

MFG

ROCHESTER ELECTRONICS LLC

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
BODY LENGTH: 0.955 INCHES MINIMUM AND 1.010 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.300 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMED AND W/ENABLE AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: DATA LINK 76301
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
TEST DATA DOCUMENT: 13499-351-1933 DRAWING
TIME RATING PER CHACTERISTIC: 80.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

1004099-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308659

NSN

5962-01-130-8659

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1004099-01

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308659

NSN

5962-01-130-8659

MFG

RAYTHEON TECHNICAL SERVICES COMPANY

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 LATCH, R/S
FEATURES PROVIDED: W/TOTEM POLE OUTPUT AND POSITIVE OUTPUTS AND LOW POWER AND SCHOTTKY
III END ITEM IDENTIFICATION: B-52G/H WST 36378
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 3-2-3-2 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 21.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

SN74LS279N/P3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308659

NSN

5962-01-130-8659

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SN74LS279N/P3

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308659

NSN

5962-01-130-8659

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 LATCH, R/S
FEATURES PROVIDED: W/TOTEM POLE OUTPUT AND POSITIVE OUTPUTS AND LOW POWER AND SCHOTTKY
III END ITEM IDENTIFICATION: B-52G/H WST 36378
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: QUAD 3-2-3-2 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 22.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 21.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 5.5 VOLTS MAXIMUM POWER SOURCE

725000-645

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

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725000-645

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND MONOLITHIC AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: TRANSM ALQ99 06129
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-848200 DRAWING
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE

848200-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

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848200-1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

MFG

RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND MONOLITHIC AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: TRANSM ALQ99 06129
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-848200 DRAWING
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE

9109DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

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9109DMQB

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND MONOLITHIC AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: TRANSM ALQ99 06129
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-848200 DRAWING
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE

DMS 87019B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

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DMS 87019B

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

MFG

DLA LAND AND MARITIME

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND MONOLITHIC AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: TRANSM ALQ99 06129
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-848200 DRAWING
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE

MC689TL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

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MC689TL

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308660

NSN

5962-01-130-8660

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.796 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 6 INVERTER
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH VOLTAGE AND MONOLITHIC AND W/OPEN COLLECTOR
III END ITEM IDENTIFICATION: TRANSM ALQ99 06129
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: HEX 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 49956-848200 DRAWING
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -1.5 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE

642AS7917

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

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642AS7917

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

MFG

NAVAL AIR SYSTEMS COMMAND

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 30003-642AS7917 DRAWING

DM54713

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

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DM54713

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

MFG

NATIONAL SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 30003-642AS7917 DRAWING

DM7551

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

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DM7551

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

MFG

NATIONAL SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 30003-642AS7917 DRAWING

SN54713

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

View More Info

SN54713

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 30003-642AS7917 DRAWING

SNJ54173J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

View More Info

SNJ54173J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011308661

NSN

5962-01-130-8661

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.165 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 4 REGISTER, D-TYPE
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLEAR AND W/CLOCK AND 3-STATE OUTPUT
III END ITEM IDENTIFICATION: MULTI-HULL 03950
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 30003-642AS7917 DRAWING