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5962-01-138-3372

20 Products

ZA0944N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383372

NSN

5962-01-138-3372

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ZA0944N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383372

NSN

5962-01-138-3372

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 0.860 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND 3-STATE OUTPUT AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 55.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 20886-252-400944 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

416C-5-010B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383372

NSN

5962-01-138-3372

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416C-5-010B

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383372

NSN

5962-01-138-3372

MFG

NEC ELECTRONICS USA INC ELECTRONIC ARRAYS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 0.860 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND 3-STATE OUTPUT AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 55.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 20886-252-400944 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

MK4116N-91

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383372

NSN

5962-01-138-3372

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MK4116N-91

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383372

NSN

5962-01-138-3372

MFG

STMICROELECTRONICS INC

Description

(NON-CORE DATA) BIT QUANTITY: 16384
(NON-CORE DATA) WORD QUANTITY: 16384
BODY HEIGHT: 0.220 INCHES MAXIMUM
BODY LENGTH: 0.860 INCHES MAXIMUM
BODY WIDTH: 0.290 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND 3-STATE OUTPUT AND LOW POWER
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 55.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 20886-252-400944 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

MK5002N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383373

NSN

5962-01-138-3373

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MK5002N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383373

NSN

5962-01-138-3373

MFG

STMICROELECTRONICS INC

Description

BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 1.450 INCHES NOMINAL
BODY WIDTH: 0.540 INCHES NOMINAL
FEATURES PROVIDED: SYNCHRONOUS AND W/RESET AND TRUE/COMPLEMENTARY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.5 VOLTS MAXIMUM POWER SOURCE

07F74912

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383374

NSN

5962-01-138-3374

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07F74912

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383374

NSN

5962-01-138-3374

MFG

HEKIMIAN LABORATORIES INC CUSTOMER SUPPORT DEPT

Description

BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 1.393 INCHES MINIMUM AND 1.420 INCHES MAXIMUM
BODY WIDTH: 0.505 INCHES MINIMUM AND 0.515 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 DRIVER
FEATURES PROVIDED: W/ENABLE AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL HEIGHT: 0.355 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE

885995

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383374

NSN

5962-01-138-3374

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885995

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383374

NSN

5962-01-138-3374

MFG

NORTH ATLANTIC INDUSTRIES INC.

Description

BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 1.393 INCHES MINIMUM AND 1.420 INCHES MAXIMUM
BODY WIDTH: 0.505 INCHES MINIMUM AND 0.515 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 DRIVER
FEATURES PROVIDED: W/ENABLE AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL HEIGHT: 0.355 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE

MM74C912N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383374

NSN

5962-01-138-3374

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MM74C912N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383374

NSN

5962-01-138-3374

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.125 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 1.393 INCHES MINIMUM AND 1.420 INCHES MAXIMUM
BODY WIDTH: 0.505 INCHES MINIMUM AND 0.515 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONTROL AND 1 DRIVER
FEATURES PROVIDED: W/ENABLE AND 3-STATE OUTPUT AND MONOLITHIC
III OVERALL HEIGHT: 0.355 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 28 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 6.5 VOLTS MAXIMUM POWER SOURCE

07L08253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383375

NSN

5962-01-138-3375

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07L08253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383375

NSN

5962-01-138-3375

MFG

HEKIMIAN LABORATORIES INC CUSTOMER SUPPORT DEPT

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.245 INCHES MAXIMUM
BODY WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, INTERVAL
FEATURES PROVIDED: PROGRAMMABLE AND W/CLOCK AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

8253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383375

NSN

5962-01-138-3375

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8253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383375

NSN

5962-01-138-3375

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.245 INCHES MAXIMUM
BODY WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, INTERVAL
FEATURES PROVIDED: PROGRAMMABLE AND W/CLOCK AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

P8253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383375

NSN

5962-01-138-3375

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P8253

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383375

NSN

5962-01-138-3375

MFG

INTEL CORP SALES OFFICE

Description

BODY HEIGHT: 0.150 INCHES MINIMUM AND 0.160 INCHES MAXIMUM
BODY LENGTH: 1.235 INCHES MINIMUM AND 1.245 INCHES MAXIMUM
BODY WIDTH: 0.535 INCHES MINIMUM AND 0.545 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 TIMER, INTERVAL
FEATURES PROVIDED: PROGRAMMABLE AND W/CLOCK AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 20 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS

HM472114P-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383376

NSN

5962-01-138-3376

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HM472114P-3

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383376

NSN

5962-01-138-3376

MFG

HITACHI MAGNETICS CORP DIV OF HITACHI METALS INTERNATIONAL LTD

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.895 INCHES MINIMUM AND 0.905 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
FEATURES PROVIDED: W/ENABLE AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

TMS2114L-25NL

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383376

NSN

5962-01-138-3376

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TMS2114L-25NL

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383376

NSN

5962-01-138-3376

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.130 INCHES MINIMUM AND 0.140 INCHES MAXIMUM
BODY LENGTH: 0.895 INCHES MINIMUM AND 0.905 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM
FEATURES PROVIDED: W/ENABLE AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 16 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

156-1127-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

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156-1127-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

MFG

TEKTRONIX INC. DBA TEKTRONIX

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

2114L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

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2114L

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

MFG

INTEL CORP SALES OFFICE

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM9114BDC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

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AM9114BDC

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM9114CPCB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

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AM9114CPCB

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383379

NSN

5962-01-138-3379

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.165 INCHES MAXIMUM
BODY LENGTH: 0.880 INCHES MINIMUM AND 0.920 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND POSITIVE OUTPUTS AND HIGH SPEED AND LOW POWER AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 100.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

160-0890-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383380

NSN

5962-01-138-3380

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160-0890-01

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383380

NSN

5962-01-138-3380

MFG

TEKTRONIX INC. DBA TEKTRONIX

160-0890-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383380

NSN

5962-01-138-3380

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160-0890-02

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011383380

NSN

5962-01-138-3380

MFG

TEKTRONIX INC. DBA TEKTRONIX

725004-224

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383498

NSN

5962-01-138-3498

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725004-224

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383498

NSN

5962-01-138-3498

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.620 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIDIRECTIONAL AND W/CLOCK AND W/RESET
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 27 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE

AM8085A-2B/BQA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383498

NSN

5962-01-138-3498

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AM8085A-2B/BQA

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011383498

NSN

5962-01-138-3498

MFG

ADVANCED MICRO DEVICES INC DBA A M D

Description

(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.620 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIDIRECTIONAL AND W/CLOCK AND W/RESET
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 27 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE