My Quote Request
5962-01-138-3740
20 Products
MM54C42
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383740
NSN
5962-01-138-3740
MFG
NATIONAL SEMICONDUCTOR CORP
Description
MICROCIRCUIT,DIGITAL
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C8085A2B
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383498
NSN
5962-01-138-3498
MFG
INTEL CORP SALES OFFICE
Description
(NON-CORE DATA) BIT QUANTITY: 8
BODY HEIGHT: 0.210 INCHES MAXIMUM
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.620 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 MICROPROCESSOR
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND BIDIRECTIONAL AND W/CLOCK AND W/RESET
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 27 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.5 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
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CA1558E
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383725
NSN
5962-01-138-3725
MFG
INTERSIL CORPORATION
Description
MICROCIRCUIT,LINEAR
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848463-1
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383727
NSN
5962-01-138-3727
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: ADJUSTABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 4300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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SC87956FH3
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383727
NSN
5962-01-138-3727
MFG
FREESCALE SEMICONDUCTOR INC.
Description
BODY HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: ADJUSTABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 4300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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SG117K
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383727
NSN
5962-01-138-3727
MFG
MICROSEMI CORP.-INTEGRATED PRODUCTS
Description
BODY HEIGHT: 0.250 INCHES MINIMUM AND 0.450 INCHES MAXIMUM
BODY LENGTH: 1.573 INCHES MAXIMUM
BODY WIDTH: 1.050 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: TO-3 JOINT ELECTRON DEVICE ENGINEERING COUNCIL
DESIGN FUNCTION AND QUANTITY: 1 REGULATOR, VOLTAGE
FEATURES PROVIDED: ADJUSTABLE AND HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 1 INPUT
MAXIMUM POWER DISSIPATION RATING: 4300.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
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LH24250D
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383728
NSN
5962-01-138-3728
MFG
RCA CORP DISTRIBUTION AND SPECIAL PRODUCTS
Description
MICROCIRCUIT,LINEAR
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280-22002-227
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383729
NSN
5962-01-138-3729
MFG
THE BOEING COMPANY DBA BOEING
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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725000-785
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383729
NSN
5962-01-138-3729
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383729
NSN
5962-01-138-3729
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383729
NSN
5962-01-138-3729
MFG
LINEAR TECHNOLOGY CORPORATION DBA LINEAR TECHNOLOGY
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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SM-A-989317
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011383729
NSN
5962-01-138-3729
MFG
US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR
Description
BODY HEIGHT: 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY LENGTH: 0.785 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 2 COMPARATOR, VOLTAGE
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
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461442-40
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383734
NSN
5962-01-138-3734
MFG
RAYTHEON TECHNICAL SERVICES COMPANY LLC DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 256
FEATURES PROVIDED: BIPOLAR AND FIXED MASK AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383734
NSN
5962-01-138-3734
ROM/PROM FAMILY 022
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383734
NSN
5962-01-138-3734
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
FEATURES PROVIDED: BIPOLAR AND FIXED MASK AND HERMETICALLY SEALED AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: SILICON
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
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48-057535-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383735
NSN
5962-01-138-3735
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
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48-057536-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383736
NSN
5962-01-138-3736
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
Related Searches:
48-057537-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383737
NSN
5962-01-138-3737
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
INCLOSURE CONFIGURATION: DUAL-IN-LINE
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48-066357-01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383738
NSN
5962-01-138-3738
MFG
NORTHROP GRUMMAN SYSTEMS CORPORATION DIV MULTIPLE
Description
FEATURES PROVIDED: PROGRAMMABLE AND HERMETICALLY SEALED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: RESISTOR-TRANSISTOR LOGIC
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MM54C00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383739
NSN
5962-01-138-3739
MFG
NATIONAL SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.156 INCHES NOMINAL
BODY LENGTH: 0.763 INCHES NOMINAL
BODY WIDTH: 0.249 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
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MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011383739
NSN
5962-01-138-3739
MFG
ADELCO ELEKTRONIK GMBH
Description
BODY HEIGHT: 0.156 INCHES NOMINAL
BODY LENGTH: 0.763 INCHES NOMINAL
BODY WIDTH: 0.249 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 GATE, NAND
FEATURES PROVIDED: MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TIME RATING PER CHACTERISTIC: 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 15.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT