My Quote Request
5962-01-147-0581
20 Products
874339-2
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011470581
NSN
5962-01-147-0581
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.355 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY WIDTH: 0.100 INCHES MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, PREAMPLIFIER
FEATURES PROVIDED: HYBRID AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: PLATFORM,NAV
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
874339-0002
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011470581
NSN
5962-01-147-0581
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.355 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY WIDTH: 0.100 INCHES MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, PREAMPLIFIER
FEATURES PROVIDED: HYBRID AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: PLATFORM,NAV
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
874339-1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011470581
NSN
5962-01-147-0581
MFG
NORTHROP GRUMMAN GUIDANCE AND ELECTRONICS COMPANY INC. DBA NAVIGATION SYSTEMS DIVISION DIV NAVIGATION SYSTEMS DIVISION
Description
BODY HEIGHT: 0.355 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY LENGTH: 0.355 INCHES MINIMUM AND 0.395 INCHES MAXIMUM
BODY WIDTH: 0.100 INCHES MAXIMUM
CRITICALITY CODE JUSTIFICATION: FEAT
DESIGN FUNCTION AND QUANTITY: 2 AMPLIFIER, PREAMPLIFIER
FEATURES PROVIDED: HYBRID AND ELECTROSTATIC SENSITIVE
III END ITEM IDENTIFICATION: PLATFORM,NAV
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
SPECIAL FEATURES: ELECTROSTATIC DISCHARGE SENSITIVE
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
46605-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470582
NSN
5962-01-147-0582
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722918-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470582
NSN
5962-01-147-0582
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470582
NSN
5962-01-147-0582
MFG
DLA LAND AND MARITIME
Description
MICROCIRCUIT,MEMORY
Related Searches:
46606-1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470583
NSN
5962-01-147-0583
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
45382-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470584
NSN
5962-01-147-0584
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722918-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470584
NSN
5962-01-147-0584
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
45383-3
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470585
NSN
5962-01-147-0585
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
5962-3820602BVA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470585
NSN
5962-01-147-0585
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20602BVA
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470585
NSN
5962-01-147-0585
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470585
NSN
5962-01-147-0585
ROM/PROM FAMILY 030
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470585
NSN
5962-01-147-0585
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 1024
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
CURRENT RATING PER CHARACTERISTIC: 140.00 MILLIAMPERES MAXIMUM SUPPLY
FEATURES PROVIDED: HERMETICALLY SEALED AND BURN IN AND MONOLITHIC AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 794.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
TIME RATING PER CHACTERISTIC: 85.00 NANOSECONDS MAXIMUM ACCESS
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
45384-4
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470586
NSN
5962-01-147-0586
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722913-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470586
NSN
5962-01-147-0586
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
45379-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470587
NSN
5962-01-147-0587
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722918-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470587
NSN
5962-01-147-0587
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
45380-6
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470588
NSN
5962-01-147-0588
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
722918-50
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470588
NSN
5962-01-147-0588
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY
Related Searches:
45381-2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011470589
NSN
5962-01-147-0589
MFG
RAYTHEON COMPANY DBA RAYTHEON
Description
MICROCIRCUIT,MEMORY