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5962-01-153-7647

20 Products

SN74S301N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011537647

NSN

5962-01-153-7647

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SN74S301N

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011537647

NSN

5962-01-153-7647

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN54S301J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011537647

NSN

5962-01-153-7647

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SN54S301J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011537647

NSN

5962-01-153-7647

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN74S301J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011537647

NSN

5962-01-153-7647

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SN74S301J

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011537647

NSN

5962-01-153-7647

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.280 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND HIGH PERFORMANCE AND SCHOTTKY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 13 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
MEMORY DEVICE TYPE: RAM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

1820-0839

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537648

NSN

5962-01-153-7648

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1820-0839

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537648

NSN

5962-01-153-7648

MFG

AGILENT TECHNOLOGIES INC. DBA NORTH AMERICAN CONTACT CENTER DIV AGILENT BUSINESS CENTER

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: W/COMMON CLEAR AND W/COMMON CLOCK AND POSITIVE EDGE TRIGGERED AND COMPLEMENTARY OUTPUTS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

DM74175N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537648

NSN

5962-01-153-7648

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DM74175N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537648

NSN

5962-01-153-7648

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: W/COMMON CLEAR AND W/COMMON CLOCK AND POSITIVE EDGE TRIGGERED AND COMPLEMENTARY OUTPUTS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

SN74175N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537648

NSN

5962-01-153-7648

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SN74175N

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537648

NSN

5962-01-153-7648

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.180 INCHES MAXIMUM
BODY LENGTH: 0.870 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 4 FLIP-FLOP, D-TYPE
FEATURES PROVIDED: W/COMMON CLEAR AND W/COMMON CLOCK AND POSITIVE EDGE TRIGGERED AND COMPLEMENTARY OUTPUTS AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 8 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 30.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 35.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE

B4023686

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537649

NSN

5962-01-153-7649

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B4023686

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537649

NSN

5962-01-153-7649

MFG

DEPARTMENT OF THE ARMY HQ UNITED STATES ARMY COMMUNICATIONS RESEARCH AND DEVELOPMENT COMMAND

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLOCK AND W/RESET AND COMPLEMENTARY OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 56996-B4023686 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

MD4332BC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537649

NSN

5962-01-153-7649

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MD4332BC

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537649

NSN

5962-01-153-7649

MFG

MITEL CORP ADAPTIVE SYSTEMS DIV ADAPTIVE SYSTEMS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLOCK AND W/RESET AND COMPLEMENTARY OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 56996-B4023686 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

MD4332BD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537649

NSN

5962-01-153-7649

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MD4332BD

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011537649

NSN

5962-01-153-7649

MFG

MITEL CORP ADAPTIVE SYSTEMS DIV ADAPTIVE SYSTEMS DIV

Description

(NON-CORE DATA) BIT QUANTITY: 32
BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.205 INCHES MAXIMUM
BODY LENGTH: 2.096 INCHES MAXIMUM
BODY WIDTH: 0.510 INCHES MINIMUM AND 0.620 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-5 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 SHIFT REGISTER, STATIC
FEATURES PROVIDED: HERMETICALLY SEALED AND W/CLOCK AND W/RESET AND COMPLEMENTARY OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 4 INPUT
MAXIMUM POWER DISSIPATION RATING: 400.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 40 PRINTED CIRCUIT
TEST DATA DOCUMENT: 56996-B4023686 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.5 VOLTS MAXIMUM POWER SOURCE

MN3005

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537650

NSN

5962-01-153-7650

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MN3005

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537650

NSN

5962-01-153-7650

MFG

SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER

Description

(NON-CORE DATA) BIT QUANTITY: 10
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 585.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

053-1532

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

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053-1532

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

MFG

DIT-MCO INTERNATIONAL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 10
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 585.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

054-01142-0002

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

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054-01142-0002

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

MFG

DIT-MCO INTERNATIONAL CORPORATION

Description

(NON-CORE DATA) BIT QUANTITY: 10
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 585.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

570931-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

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570931-1

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 10
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 585.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

MN3003

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

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MN3003

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

MFG

SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER

Description

(NON-CORE DATA) BIT QUANTITY: 10
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 585.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

MN310R

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

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MN310R

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537651

NSN

5962-01-153-7651

MFG

SPECTRUM MICROWAVE INC. DBA MICRO NETWORKS DIV SPECTRUM MICROWAVE WORCESTER

Description

(NON-CORE DATA) BIT QUANTITY: 10
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC AND HERMETICALLY SEALED AND HIGH RELIABILITY
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 585.0 MILLIWATTS
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.0 VOLTS MAXIMUM POWER SOURCE

AE4548703

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011537850

NSN

5962-01-153-7850

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AE4548703

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011537850

NSN

5962-01-153-7850

MFG

ROHDE & SCHWARZ GMBH & CO. KG

LM103-2-7

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011537850

NSN

5962-01-153-7850

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LM103-2-7

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011537850

NSN

5962-01-153-7850

MFG

NATIONAL SEMICONDUCTOR CORPORATION

ADC-HS12BGC

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537952

NSN

5962-01-153-7952

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ADC-HS12BGC

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537952

NSN

5962-01-153-7952

MFG

MURATA POWER SOLUTIONS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.700 INCHES NOMINAL
BODY WIDTH: 1.100 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND W/SAMPLE AND HOLD AND HIGH PERFORMANCE AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

ADC-HS12BMC

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537952

NSN

5962-01-153-7952

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ADC-HS12BMC

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011537952

NSN

5962-01-153-7952

MFG

MURATA POWER SOLUTIONS INC.

Description

(NON-CORE DATA) BIT QUANTITY: 12
BODY HEIGHT: 0.160 INCHES NOMINAL
BODY LENGTH: 1.700 INCHES NOMINAL
BODY WIDTH: 1.100 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, ANALOG TO DIGITAL
FEATURES PROVIDED: HERMETICALLY SEALED AND HYBRID AND W/SAMPLE AND HOLD AND HIGH PERFORMANCE AND W/CLOCK
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 3 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: TIN
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT

3316113-1B1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011538111

NSN

5962-01-153-8111

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3316113-1B1

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011538111

NSN

5962-01-153-8111

MFG

ALLIED-SIGNAL INC DBA ALLIED-SIGNAL AEROSPACE CO ELECTRODYNAMICS DIV

Description

BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 MULTIPLEXER, DIGITAL
FEATURES PROVIDED: BURN IN AND MONOLITHIC AND W/STROBE AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 8 CHANNEL AND 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 77068-3316113 DRAWING
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 18.3 VOLTS MAXIMUM POWER SOURCE