My Quote Request
5962-01-167-3237
20 Products
Z2499A.V01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673237
NSN
5962-01-167-3237
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.150 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172499P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673237
NSN
5962-01-167-3237
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.150 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4174252P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673237
NSN
5962-01-167-3237
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.150 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6301-1J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673237
NSN
5962-01-167-3237
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.150 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
93427DC
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673237
NSN
5962-01-167-3237
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.150 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673237
NSN
5962-01-167-3237
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
BODY HEIGHT: 0.150 INCHES MINIMUM
BODY LENGTH: 0.755 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.265 INCHES MINIMUM AND 0.291 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND 3-STATE OUTPUT AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 45.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172497P001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673238
NSN
5962-01-167-3238
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172497P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673238
NSN
5962-01-167-3238
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4174254P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673238
NSN
5962-01-167-3238
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673238
NSN
5962-01-167-3238
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673238
NSN
5962-01-167-3238
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
Z2497A.V01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673238
NSN
5962-01-167-3238
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172497P002
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673239
NSN
5962-01-167-3239
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172497P2
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673239
NSN
5962-01-167-3239
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4174254P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673239
NSN
5962-01-167-3239
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673239
NSN
5962-01-167-3239
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673239
NSN
5962-01-167-3239
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
Z2497A.V02
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673239
NSN
5962-01-167-3239
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172990P001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673240
NSN
5962-01-167-3240
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 1.045 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172990P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673240
NSN
5962-01-167-3240
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 1.045 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4174257P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673240
NSN
5962-01-167-3240
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 1.045 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6349-1J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011673240
NSN
5962-01-167-3240
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 4096
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.115 INCHES MINIMUM AND 0.145 INCHES MAXIMUM
BODY LENGTH: 1.045 INCHES MINIMUM AND 1.060 INCHES MAXIMUM
BODY WIDTH: 0.245 INCHES MINIMUM AND 0.252 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND W/ENABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 20 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE