My Quote Request
5962-01-167-5066
20 Products
AH4154
MICROCIRCUIT,LINEAR
NSN, MFG P/N
5962011675066
NSN
5962-01-167-5066
MFG
AEROFLEX / KDI INC. DIV AEROFLEX/KDI INTEGRATED PRODUCTS
Description
MICROCIRCUIT,LINEAR
Related Searches:
4172520P001
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011675067
NSN
5962-01-167-5067
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
4172520P1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011675067
NSN
5962-01-167-5067
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
4174254P1
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011675067
NSN
5962-01-167-5067
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011675067
NSN
5962-01-167-5067
ROM/PROM FAMILY 008
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011675067
NSN
5962-01-167-5067
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
Z2520A.V01
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011675067
NSN
5962-01-167-5067
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
Related Searches:
4172494P001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675068
NSN
5962-01-167-5068
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172494P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675068
NSN
5962-01-167-5068
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4174254P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675068
NSN
5962-01-167-5068
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675068
NSN
5962-01-167-5068
ROM/PROM FAMILY 008
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675068
NSN
5962-01-167-5068
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
Z2494A.V01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675068
NSN
5962-01-167-5068
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.175 INCHES MAXIMUM
BODY LENGTH: 0.790 INCHES MAXIMUM
BODY WIDTH: 0.300 INCHES MAXIMUM
FEATURES PROVIDED: 3-STATE OUTPUT AND PROGRAMMABLE AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: 0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172493P001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675069
NSN
5962-01-167-5069
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172493P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675069
NSN
5962-01-167-5069
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4174255P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675069
NSN
5962-01-167-5069
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
6330-1J
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675069
NSN
5962-01-167-5069
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675069
NSN
5962-01-167-5069
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
Z2493A.V01
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675069
NSN
5962-01-167-5069
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 256
(NON-CORE DATA) WORD QUANTITY: 32
BODY HEIGHT: 0.150 INCHES MAXIMUM
BODY LENGTH: 0.750 INCHES MINIMUM AND 0.865 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/OPEN COLLECTOR
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 6 INPUT
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS MAXIMUM POWER SOURCE
Related Searches:
4172495P001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675070
NSN
5962-01-167-5070
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
Related Searches:
4172495P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675070
NSN
5962-01-167-5070
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM
Related Searches:
4174252P1
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011675070
NSN
5962-01-167-5070
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 1024
(NON-CORE DATA) WORD QUANTITY: 256
FEATURES PROVIDED: PROGRAMMED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
MEMORY DEVICE TYPE: PROM