My Quote Request
5962-01-168-5239
20 Products
SMJ4164JDM
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685239
NSN
5962-01-168-5239
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND HERMETICALLY SEALED AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
MCM6665ABECB15
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685239
NSN
5962-01-168-5239
MFG
FREESCALE SEMICONDUCTOR INC.
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND HERMETICALLY SEALED AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
MKB4564P-82
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685239
NSN
5962-01-168-5239
MFG
STMICROELECTRONICS INC
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND HERMETICALLY SEALED AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
MT4264C-15/883C
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685239
NSN
5962-01-168-5239
MFG
MICRON TECHNOLOGY INC.
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND HERMETICALLY SEALED AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
SMJ4164-15JDS
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685239
NSN
5962-01-168-5239
MFG
TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP
Description
(NON-CORE DATA) BIT QUANTITY: 65536
(NON-CORE DATA) WORD QUANTITY: 65536
BODY HEIGHT: 0.180 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.295 INCHES NOMINAL
FEATURES PROVIDED: DYNAMIC AND HERMETICALLY SEALED AND LOW POWER AND HIGH SPEED
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 1.0 WATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
Related Searches:
PR1472A-00
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685240
NSN
5962-01-168-5240
MFG
WESTERN DIGITAL CORP
Description
(NON-CORE DATA) BIT QUANTITY: 100000
BODY HEIGHT: 0.100 INCHES MAXIMUM
BODY LENGTH: 2.025 INCHES MAXIMUM
BODY WIDTH: 0.610 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 RECEIVER
FEATURES PROVIDED: ASYNCHRONOUS AND SYNCHRONOUS AND PROGRAMMABLE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
OPERATING TEMP RANGE: 0.0 TO 50.0 DEG CELSIUS
OUTPUT LOGIC FORM: DIODE-TRANSISTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
Related Searches:
CD4010BE
MICROCIRCUIT,DIGITAL
NSN, MFG P/N
5962011685241
NSN
5962-01-168-5241
MFG
L-3 COMMUNICATIONS CORPORATION DBA COMMUNICATION SYSTEMS - EAST DIVISION
Description
BODY HEIGHT: 0.135 INCHES MINIMUM AND 0.150 INCHES MAXIMUM
BODY LENGTH: 0.745 INCHES MINIMUM AND 0.785 INCHES MAXIMUM
BODY WIDTH: 0.240 INCHES MINIMUM AND 0.260 INCHES MAXIMUM
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 6 INPUT
OPERATING TEMP RANGE: -40.0 TO 85.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC
Related Searches:
012-109404-01
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
012-109404-01
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
MFG
ITT INDUSTRIES INC SYSTEMS DIV
Description
BODY HEIGHT: 0.020 INCHES MINIMUM AND 0.040 INCHES MAXIMUM
BODY LENGTH: 0.374 INCHES MINIMUM AND 0.392 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
312011-001
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
312011-001
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
BODY HEIGHT: 0.020 INCHES MINIMUM AND 0.040 INCHES MAXIMUM
BODY LENGTH: 0.374 INCHES MINIMUM AND 0.392 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
445/4/13242/000
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
445/4/13242/000
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
MFG
G E C MARCONI S3I LTD COMBAT SYSTEMS IVISION
Description
BODY HEIGHT: 0.020 INCHES MINIMUM AND 0.040 INCHES MAXIMUM
BODY LENGTH: 0.374 INCHES MINIMUM AND 0.392 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
UA9636ARMQB
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
UA9636ARMQB
MICROCIRCUIT,DIGITAL-LINEAR
NSN, MFG P/N
5962011685242
NSN
5962-01-168-5242
MFG
FAIRCHILD SEMICONDUCTOR CORP
Description
BODY HEIGHT: 0.020 INCHES MINIMUM AND 0.040 INCHES MAXIMUM
BODY LENGTH: 0.374 INCHES MINIMUM AND 0.392 INCHES MAXIMUM
BODY WIDTH: 0.243 INCHES MINIMUM AND 0.261 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 DRIVER, LINE
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: DUAL 1 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC AND TRANSISTOR-TRANSISTOR LOGIC
TERMINAL SURFACE TREATMENT: TIN
Related Searches:
849TL0-84
MICROCIRCUIT
NSN, MFG P/N
5962011685776
NSN
5962-01-168-5776
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
MICROCIRCUIT
Related Searches:
849-74L93
MICROCIRCUIT
NSN, MFG P/N
5962011685777
NSN
5962-01-168-5777
MFG
AMETEK PROGRAMMABLE POWER INC.
Description
MICROCIRCUIT
Related Searches:
202515-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685838
NSN
5962-01-168-5838
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
242829-017
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685838
NSN
5962-01-168-5838
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20902BVX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685838
NSN
5962-01-168-5838
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685838
NSN
5962-01-168-5838
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
202515-001
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685839
NSN
5962-01-168-5839
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
242829-018
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685839
NSN
5962-01-168-5839
MFG
BAE SYSTEMS INFORMATION AND ELECTRONIC SYSTEMS INTEGRATION I
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
M38510/20902BVX
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011685839
NSN
5962-01-168-5839
MFG
MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.185 INCHES MAXIMUM
BODY LENGTH: 0.960 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-6 MIL-M-38510
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 PRINTED CIRCUIT
TEST DATA DOCUMENT: 81349-MIL-M-38510 SPECIFICATION
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE