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5962-01-170-1619

20 Products

UA741T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

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UA741T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

MFG

PHILIPS SEMICONDUCTORS INC

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE

SG741T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

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SG741T

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

MFG

MICROSEMI CORP.-INTEGRATED PRODUCTS

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE

SN52741L

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

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SN52741L

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE

U5B7741312

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

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U5B7741312

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701619

NSN

5962-01-170-1619

MFG

FAIRCHILD SEMICONDUCTOR CORP

Description

BODY HEIGHT: 0.165 INCHES MINIMUM AND 0.185 INCHES MAXIMUM
BODY OUTSIDE DIAMETER: 0.335 INCHES MINIMUM AND 0.370 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, OPERATIONAL, GENERAL PURPOSE
FEATURES PROVIDED: HERMETICALLY SEALED AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS
INCLOSURE CONFIGURATION: CAN
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 2 INPUT
MAXIMUM POWER DISSIPATION RATING: 500.0 MILLIWATTS
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 8 PIN
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 22.0 VOLTS MAXIMUM POWER SOURCE

7684-40195-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701624

NSN

5962-01-170-1624

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7684-40195-001

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701624

NSN

5962-01-170-1624

MFG

RAYTHEON COMPANY DBA RAYTHEON DIV MISSILE SYSTEMS

Description

BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, POWER
FEATURES PROVIDED: HIGH IMPEDANCE AND HIGH CURRENT AND LOW VOLTAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE

LM384N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701624

NSN

5962-01-170-1624

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LM384N

MICROCIRCUIT,LINEAR

NSN, MFG P/N

5962011701624

NSN

5962-01-170-1624

MFG

NATIONAL SEMICONDUCTOR CORPORATION

Description

BODY HEIGHT: 0.130 INCHES NOMINAL
BODY LENGTH: 0.770 INCHES MAXIMUM
BODY WIDTH: 0.250 INCHES NOMINAL
DESIGN FUNCTION AND QUANTITY: 1 AMPLIFIER, POWER
FEATURES PROVIDED: HIGH IMPEDANCE AND HIGH CURRENT AND LOW VOLTAGE
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 2 INPUT
OPERATING TEMP RANGE: -0.0 TO 70.0 DEG CELSIUS
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 14 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.5 VOLTS MAXIMUM POWER SOURCE

7849588P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701625

NSN

5962-01-170-1625

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7849588P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701625

NSN

5962-01-170-1625

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND W/ENABLE AND W/CLOCK
III END ITEM IDENTIFICATION: RADAR SYSTEM AN/FPS-117
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

SNJ54S169J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701625

NSN

5962-01-170-1625

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SNJ54S169J

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701625

NSN

5962-01-170-1625

MFG

TEXAS INSTRUMENTS INCORPORATED DBA TEXAS INSTRUMENTS DIV SEMICONDUCTOR GROUP

Description

(NON-CORE DATA) BIT QUANTITY: 4
BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 1 COUNTER, BINARY
FEATURES PROVIDED: HERMETICALLY SEALED AND SCHOTTKY AND W/ENABLE AND W/CLOCK
III END ITEM IDENTIFICATION: RADAR SYSTEM AN/FPS-117
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

7849700P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701626

NSN

5962-01-170-1626

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7849700P001

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701626

NSN

5962-01-170-1626

MFG

LOCKHEED MARTIN CORPORATION DBA MS2 DIV MS2 RADAR SYSTEMS

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
III END ITEM IDENTIFICATION: RADAR SYSTEM AN/FPS-117
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

MC10503BEBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701626

NSN

5962-01-170-1626

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MC10503BEBS

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701626

NSN

5962-01-170-1626

MFG

FREESCALE SEMICONDUCTOR INC.

Description

BODY HEIGHT: 0.185 INCHES NOMINAL
BODY LENGTH: 0.840 INCHES MAXIMUM
BODY WIDTH: 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
CASE OUTLINE SOURCE AND DESIGNATOR: D-2 MIL-M-38510
DESIGN FUNCTION AND QUANTITY: 4 GATE, OR
FEATURES PROVIDED: HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS
III END ITEM IDENTIFICATION: RADAR SYSTEM AN/FPS-117
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC AND GLASS
INPUT CIRCUIT PATTERN: QUAD 2 INPUT
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: EMITTER-COUPLED LOGIC
STORAGE TEMP RANGE: -55.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TEST DATA DOCUMENT: 96906-MIL-STD-883 STANDARD
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 8.0 VOLTS MAXIMUM POWER SOURCE

41101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701719

NSN

5962-01-170-1719

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41101

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701719

NSN

5962-01-170-1719

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

722905-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701719

NSN

5962-01-170-1719

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722905-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701719

NSN

5962-01-170-1719

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

41102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701720

NSN

5962-01-170-1720

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41102

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701720

NSN

5962-01-170-1720

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

722905-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701720

NSN

5962-01-170-1720

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722905-50

MICROCIRCUIT,MEMORY

NSN, MFG P/N

5962011701720

NSN

5962-01-170-1720

MFG

RAYTHEON COMPANY DBA RAYTHEON

Description

(NON-CORE DATA) BIT QUANTITY: 2048
(NON-CORE DATA) WORD QUANTITY: 512
BODY HEIGHT: 0.120 INCHES MAXIMUM
BODY LENGTH: 0.740 INCHES MINIMUM AND 0.830 INCHES MAXIMUM
BODY WIDTH: 0.280 INCHES MINIMUM AND 0.310 INCHES MAXIMUM
FEATURES PROVIDED: HERMETICALLY SEALED AND PROGRAMMABLE AND BIPOLAR AND W/ENABLE AND W/BUFFERED OUTPUT
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 10 INPUT
MAXIMUM POWER DISSIPATION RATING: 614.0 MILLIWATTS
MEMORY DEVICE TYPE: PROM
OPERATING TEMP RANGE: -0.0 TO 75.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
TIME RATING PER CHACTERISTIC: 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 50.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 5.5 VOLTS NOMINAL POWER SOURCE

930211-1B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

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930211-1B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.500 INCHES MAXIMUM
BODY LENGTH: 4.080 INCHES MAXIMUM
BODY WIDTH: 2.030 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 16 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE

930211-2B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

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930211-2B

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

MFG

RAYTHEON COMPANY

Description

BODY HEIGHT: 0.500 INCHES MAXIMUM
BODY LENGTH: 4.080 INCHES MAXIMUM
BODY WIDTH: 2.030 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 16 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE

A2791

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

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A2791

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

MFG

ADVANCED ANALOG INC. DBA INTERNATIONAL RECTIFIER

Description

BODY HEIGHT: 0.500 INCHES MAXIMUM
BODY LENGTH: 4.080 INCHES MAXIMUM
BODY WIDTH: 2.030 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 16 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE

A3271

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

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A3271

MICROCIRCUIT,DIGITAL-LINEAR

NSN, MFG P/N

5962011701723

NSN

5962-01-170-1723

MFG

INTERNATIONAL RECTIFIER CORPORATION DBA CUSTOMER SERVICES DEPARTMENT

Description

BODY HEIGHT: 0.500 INCHES MAXIMUM
BODY LENGTH: 4.080 INCHES MAXIMUM
BODY WIDTH: 2.030 INCHES MAXIMUM
DESIGN FUNCTION AND QUANTITY: 1 CONVERTER, DIGITAL TO ANALOG
FEATURES PROVIDED: MONOLITHIC
III PRECIOUS MATERIAL: GOLD
III PRECIOUS MATERIAL AND LOCATION: TERMINAL SURFACES GOLD
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: METAL
INPUT CIRCUIT PATTERN: 16 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -55.0 TO 100.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 24 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 15.3 VOLTS MAXIMUM POWER SOURCE

23-040A9-00

MICROCIRCUIT

NSN, MFG P/N

5962011701725

NSN

5962-01-170-1725

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23-040A9-00

MICROCIRCUIT

NSN, MFG P/N

5962011701725

NSN

5962-01-170-1725

MFG

COMPAQ FEDERAL LLC

213Z007U02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701728

NSN

5962-01-170-1728

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213Z007U02

MICROCIRCUIT,DIGITAL

NSN, MFG P/N

5962011701728

NSN

5962-01-170-1728

MFG

DELTA DATA SYSTEMS CORP

Description

(NON-CORE DATA) BIT QUANTITY: 80
DESIGN FUNCTION AND QUANTITY: 4 SHIFT REGISTER
FEATURES PROVIDED: BURN IN AND STATIC OPERATION
INCLOSURE CONFIGURATION: DUAL-IN-LINE
INCLOSURE MATERIAL: PLASTIC
INPUT CIRCUIT PATTERN: 9 INPUT
OPERATING TEMP RANGE: 0.0 TO 70.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 16 PRINTED CIRCUIT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: 0.3 VOLTS MAXIMUM POWER SOURCE