My Quote Request
5962-01-171-5592
20 Products
RY4033
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715592
NSN
5962-01-171-5592
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 078
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715592
NSN
5962-01-171-5592
ROM/PROM FAMILY 078
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715592
NSN
5962-01-171-5592
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
19594
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932892-1B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932905-115
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC6323-115
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DH76052-15
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM-7685
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N0078-115
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 078
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
ROM/PROM FAMILY 078
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RY4034
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715593
NSN
5962-01-171-5593
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
19595
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
MMI/AMD
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932892-1B
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
932905-116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
RAYTHEON COMPANY
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
CC6323-116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
PHILIPS SEMICONDUCTORS INC
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
DH76052-116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
ADVANCED MICRO DEVICES INC DBA A M D
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
HM-7685
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
N0078-116
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
INTERSIL CORPORATION
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
ROM/PROM FAMILY 078
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
ROM/PROM FAMILY 078
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
DLA LAND AND MARITIME
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE
Related Searches:
RY4035
MICROCIRCUIT,MEMORY
NSN, MFG P/N
5962011715594
NSN
5962-01-171-5594
MFG
FAIRCHILD SEMICONDUCTOR CORP SEMICONDUCTOR DIV HQ
Description
(NON-CORE DATA) BIT QUANTITY: 8192
(NON-CORE DATA) WORD QUANTITY: 2048
BODY HEIGHT: 0.085 INCHES MAXIMUM
BODY LENGTH: 0.520 INCHES MAXIMUM
BODY WIDTH: 0.390 INCHES MAXIMUM
FEATURES PROVIDED: BIPOLAR AND PROGRAMMABLE AND 3-STATE OUTPUT
INCLOSURE CONFIGURATION: FLAT PACK
INCLOSURE MATERIAL: CERAMIC
INPUT CIRCUIT PATTERN: 12 INPUT
MAXIMUM POWER DISSIPATION RATING: 715.0 MILLIWATTS
MEMORY DEVICE TYPE: ROM
OPERATING TEMP RANGE: -55.0 TO 125.0 DEG CELSIUS
OUTPUT LOGIC FORM: TRANSISTOR-TRANSISTOR LOGIC
STORAGE TEMP RANGE: -65.0 TO 150.0 DEG CELSIUS
TERMINAL SURFACE TREATMENT: SOLDER
TERMINAL TYPE AND QUANTITY: 18 FLAT LEADS
TEST DATA DOCUMENT: 82577-932892 STANDARD
TIME RATING PER CHACTERISTIC: 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT
VOLTAGE RATING AND TYPE PER CHARACTERISTIC: -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE